Growth of Praseodymium Oxide Thin Films by Liquid Injection MOCVD Using a Novel Praseodymium Alkoxide Precursor†
H.C. Aspinall
Department of Chemistry, University of Liverpool, Liverpool, L69 3ZD, UK
Search for more papers by this authorJ. Gaskell
Department of Chemistry, University of Liverpool, Liverpool, L69 3ZD, UK
Search for more papers by this authorP.A. Williams
Epichem Oxides and Nitrides, Power Road, Bromborough, Wirral, Merseyside, CH62 3QF, UK
Search for more papers by this authorP.R. Chalker
Department of Materials Science and Engineering, University of Liverpool, Liverpool, L69 3BX, UK
Search for more papers by this authorP.A. Marshall
Department of Materials Science and Engineering, University of Liverpool, Liverpool, L69 3BX, UK
Search for more papers by this authorJ.F. Bickley
Department of Chemistry, University of Liverpool, Liverpool, L69 3ZD, UK
Search for more papers by this authorL.M. Smith
Epichem Oxides and Nitrides, Power Road, Bromborough, Wirral, Merseyside, CH62 3QF, UK
Search for more papers by this authorG.W. Critchlow
Institute of Surface Science and Technology, University of Loughborough, Loughborough, Leicestershire LE11 3TU, UK
Search for more papers by this authorH.C. Aspinall
Department of Chemistry, University of Liverpool, Liverpool, L69 3ZD, UK
Search for more papers by this authorJ. Gaskell
Department of Chemistry, University of Liverpool, Liverpool, L69 3ZD, UK
Search for more papers by this authorP.A. Williams
Epichem Oxides and Nitrides, Power Road, Bromborough, Wirral, Merseyside, CH62 3QF, UK
Search for more papers by this authorP.R. Chalker
Department of Materials Science and Engineering, University of Liverpool, Liverpool, L69 3BX, UK
Search for more papers by this authorP.A. Marshall
Department of Materials Science and Engineering, University of Liverpool, Liverpool, L69 3BX, UK
Search for more papers by this authorJ.F. Bickley
Department of Chemistry, University of Liverpool, Liverpool, L69 3ZD, UK
Search for more papers by this authorL.M. Smith
Epichem Oxides and Nitrides, Power Road, Bromborough, Wirral, Merseyside, CH62 3QF, UK
Search for more papers by this authorG.W. Critchlow
Institute of Surface Science and Technology, University of Loughborough, Loughborough, Leicestershire LE11 3TU, UK
Search for more papers by this authorWe are grateful to Epichem Limited for support of this work.
Abstract
Praseodymium oxide thin films are prepared using a new volatile precursor (for structure of precursor LiCl complex, see Figure) by liquid injection MOCVD. The oxide, a wide-bandgap (3.9 eV) and high-κ material, which is currently being investigated as a possible alternative to SiO2 films in silicon-based field-effect transistors, is deposited from [Pr(mmp)3] (mmp = OCMe2CH2OMe) in the presence of oxygen over the temperature range 350–600 °C.
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