Silaindacenodithiophene-Based Fused-Ring Non-Fullerene Electron Acceptor for Efficient Polymer Solar Cells†
Yaowen Nian
Optoelectronic Materials & Devices, State Key Laboratory of Luminescent Materials & Devices, South China University of Technology, Guangzhou, Guangdong, 510640 China
Search for more papers by this authorZhen Wang
Optoelectronic Materials & Devices, State Key Laboratory of Luminescent Materials & Devices, South China University of Technology, Guangzhou, Guangdong, 510640 China
Search for more papers by this authorHaiying Jiang
Optoelectronic Materials & Devices, State Key Laboratory of Luminescent Materials & Devices, South China University of Technology, Guangzhou, Guangdong, 510640 China
Search for more papers by this authorShizhen Feng
Optoelectronic Materials & Devices, State Key Laboratory of Luminescent Materials & Devices, South China University of Technology, Guangzhou, Guangdong, 510640 China
Search for more papers by this authorSuhan Li
Optoelectronic Materials & Devices, State Key Laboratory of Luminescent Materials & Devices, South China University of Technology, Guangzhou, Guangdong, 510640 China
Search for more papers by this authorLianjie Zhang
Optoelectronic Materials & Devices, State Key Laboratory of Luminescent Materials & Devices, South China University of Technology, Guangzhou, Guangdong, 510640 China
Search for more papers by this authorYong Cao
Optoelectronic Materials & Devices, State Key Laboratory of Luminescent Materials & Devices, South China University of Technology, Guangzhou, Guangdong, 510640 China
Search for more papers by this authorCorresponding Author
Junwu Chen
Optoelectronic Materials & Devices, State Key Laboratory of Luminescent Materials & Devices, South China University of Technology, Guangzhou, Guangdong, 510640 China
E-mail: [email protected]Search for more papers by this authorYaowen Nian
Optoelectronic Materials & Devices, State Key Laboratory of Luminescent Materials & Devices, South China University of Technology, Guangzhou, Guangdong, 510640 China
Search for more papers by this authorZhen Wang
Optoelectronic Materials & Devices, State Key Laboratory of Luminescent Materials & Devices, South China University of Technology, Guangzhou, Guangdong, 510640 China
Search for more papers by this authorHaiying Jiang
Optoelectronic Materials & Devices, State Key Laboratory of Luminescent Materials & Devices, South China University of Technology, Guangzhou, Guangdong, 510640 China
Search for more papers by this authorShizhen Feng
Optoelectronic Materials & Devices, State Key Laboratory of Luminescent Materials & Devices, South China University of Technology, Guangzhou, Guangdong, 510640 China
Search for more papers by this authorSuhan Li
Optoelectronic Materials & Devices, State Key Laboratory of Luminescent Materials & Devices, South China University of Technology, Guangzhou, Guangdong, 510640 China
Search for more papers by this authorLianjie Zhang
Optoelectronic Materials & Devices, State Key Laboratory of Luminescent Materials & Devices, South China University of Technology, Guangzhou, Guangdong, 510640 China
Search for more papers by this authorYong Cao
Optoelectronic Materials & Devices, State Key Laboratory of Luminescent Materials & Devices, South China University of Technology, Guangzhou, Guangdong, 510640 China
Search for more papers by this authorCorresponding Author
Junwu Chen
Optoelectronic Materials & Devices, State Key Laboratory of Luminescent Materials & Devices, South China University of Technology, Guangzhou, Guangdong, 510640 China
E-mail: [email protected]Search for more papers by this authorAbstract
In this work, a new A-D-A type nonfullerene small molecular acceptor SiIDT-IC, with a fused-ring silaindacenodithiophene (SiIDT) as D unit and 2-(3-oxo-2,3-dihydroinden-1-ylidene)malononitrile (INCN) as the end A unit, was design and synthesized. The SiIDT-IC film shows absorption peak and edge at 695 and 733 nm, respectively. The HOMO and LUMO of SiIDT-IC are of −5.47 and −3.78 eV, respectively. Compared with carbon-bridging, the Si-bridging can result in an upper-lying LUMO level of an acceptor, which is benefit to achieve a higher open-circuit voltage in polymer solar cells (PSCs). Complementary absorption and suitable energy level alignment between SiIDT-IC and wide bandgap polymer donor PBDB-T were found. For the PBDB-T:SiIDT-IC based inverted PSCs, a D/A ratio of 1: 1 was optimal to achieve a power conversion efficiency (PCE) of 7.27%. With thermal annealing (TA) of the blend film, a higher PCE of 8.16% could be realized due to increasing of both short-circuit current density and fill factor. After the TA treatment, hole and electron mobilities were elevated to 3.42 × 10−4 and 1.02 × 10−4 cm2·V−1·s−1, respectively. The results suggest that the SiIDT, a Si-bridged fused ring, is a valuable D unit to construct efficient nonfullerene acceptors for PSCs.
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