Low noise ultraviolet photodetector with over 100% enhanced lifetime based on polyfluorene copolymer and ZnO nanoparticles
Mohsen Azadinia
Organic Electronic Laboratory, Faculty of Electrical and Computer Engineering, K.N. Toosi University of Technology, Tehran 1431714191, Iran
Search for more papers by this authorMohammadreza Fathollahi
Laser and Plasma Research Institute, G.C., Shahid Beheshti University, Tehran 1983963113, Iran
Search for more papers by this authorMohsen Ameri
Laser and Plasma Research Institute, G.C., Shahid Beheshti University, Tehran 1983963113, Iran
Search for more papers by this authorSiyavash Shabani
Department of Electrical Engineering, Shamsipour Technical and Vocational College, Tehran 1617766651, Iran
Search for more papers by this authorCorresponding Author
Ezeddin Mohajerani
Laser and Plasma Research Institute, G.C., Shahid Beheshti University, Tehran 1983963113, Iran
Correspondence to: E. Mohajerani (E-mail: [email protected])Search for more papers by this authorMohsen Azadinia
Organic Electronic Laboratory, Faculty of Electrical and Computer Engineering, K.N. Toosi University of Technology, Tehran 1431714191, Iran
Search for more papers by this authorMohammadreza Fathollahi
Laser and Plasma Research Institute, G.C., Shahid Beheshti University, Tehran 1983963113, Iran
Search for more papers by this authorMohsen Ameri
Laser and Plasma Research Institute, G.C., Shahid Beheshti University, Tehran 1983963113, Iran
Search for more papers by this authorSiyavash Shabani
Department of Electrical Engineering, Shamsipour Technical and Vocational College, Tehran 1617766651, Iran
Search for more papers by this authorCorresponding Author
Ezeddin Mohajerani
Laser and Plasma Research Institute, G.C., Shahid Beheshti University, Tehran 1983963113, Iran
Correspondence to: E. Mohajerani (E-mail: [email protected])Search for more papers by this authorABSTRACT
Stability and noise current of a hybrid UV photodetector with inverted planar heterojunction (PHJ) structure indium-tin-oxide/ZnO nanoparticles (NPs)/poly[9,9′-dioctyl-fluorene-2,7-diyl]-copoly[diphenyl-p-tolyl-amine-4,4′-diyl] (BFE)/Ag are investigated. ZnO NPs as the acceptor and BFE as the donor were deposited as the active layer. Under UV light illumination, light to dark current ratio of about 102 is observed at a very low bias voltage of −1.5 V. The spectral response of the device is located near UV region with a maximum responsivity of ∼57 mA/W at wavelength of 350 nm. In particular, the prepared device exhibits remarkably higher photoresponse (∼350%) and stability (∼115%) enhancement under ambient condition compared to the reference device. In addition, the presented results show that the noise current of our device with PHJ structure is about an order of magnitude lower than that of commonly used bulk heterojunction system. © 2018 Wiley Periodicals, Inc. J. Appl. Polym. Sci. 2018, 135, 46533.
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