Article

A chemically amplified molecular glass resist with an ionic photoacid generator and a single protection group

Tatsuaki Kasai

Department of Organic and Polymeric Materials, Graduate School of Science and Engineering, Tokyo Institute of Technology, 2–12-1 H120 O-okayama, Meguro-ku, Tokyo, 152–8552 Japan

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Tomoya Higashihara,

Tomoya Higashihara

Department of Organic and Polymeric Materials, Graduate School of Science and Engineering, Tokyo Institute of Technology, 2–12-1 H120 O-okayama, Meguro-ku, Tokyo, 152–8552 Japan

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Mitsuru Ueda,

Corresponding Author

Mitsuru Ueda

Department of Organic and Polymeric Materials, Graduate School of Science and Engineering, Tokyo Institute of Technology, 2–12-1 H120 O-okayama, Meguro-ku, Tokyo, 152–8552 Japan

Correspondence to: M. Ueda (E-mail: [email protected])Search for more papers by this author

Tatsuaki Kasai,

Tatsuaki Kasai

Department of Organic and Polymeric Materials, Graduate School of Science and Engineering, Tokyo Institute of Technology, 2–12-1 H120 O-okayama, Meguro-ku, Tokyo, 152–8552 Japan

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Tomoya Higashihara,

Tomoya Higashihara

Department of Organic and Polymeric Materials, Graduate School of Science and Engineering, Tokyo Institute of Technology, 2–12-1 H120 O-okayama, Meguro-ku, Tokyo, 152–8552 Japan

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Mitsuru Ueda,

Corresponding Author

Mitsuru Ueda

Department of Organic and Polymeric Materials, Graduate School of Science and Engineering, Tokyo Institute of Technology, 2–12-1 H120 O-okayama, Meguro-ku, Tokyo, 152–8552 Japan

Correspondence to: M. Ueda (E-mail: [email protected])Search for more papers by this author

First published: 02 August 2013

https://doi.org/10.1002/app.39769

Citations: 2

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ABSTRACT

A molecular glass resist with an ionic photoacid generator and a single protection group (MR-1) has been developed. MR-1 exhibited good thermal properties, such as a 5% weight loss temperature (T_d5%) of 167°C and a glass transition temperature (T_g) of 80°C. MR-1 showed the good sensitivity of 80 μC/cm² and high contrast of 4.9 with e-beam exposure (50 keV). A relatively high resolution of 50 nm and low Line-Edge-Roughness of 3.8 nm were obtained by e-beam exposure (100 keV). © 2013 Wiley Periodicals, Inc. J. Appl. Polym. Sci. 2014, 131, 39769.

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Volume131, Issue2

January 15, 2014

A chemically amplified molecular glass resist with an ionic photoacid generator and a single protection group

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A chemically amplified molecular glass resist with an ionic photoacid generator and a single protection group

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