Original Paper
Metal oxide gate electrodes for advanced CMOS technology
First published: 10 February 2004
Abstract
We have prepared RuO2 and SrRuO3 thin films for application as gate electrodes in CMOS technology. RuO2 and SrRuO3 films exhibit satisfactory stability in oxygen atmosphere at elevated temperatures. RuO2 films decompose in reducing atmosphere. Extracted work function values for RuO2 electrode are around 5.1 eV, confirming that RuO2 is a suitable candidate for pMOS gate electrode application.
