Chapter 12
Direct Bonding
Hideki Takagi,
Hideki Takagi
Device Technology Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Namiki 1-2-1, Tsukuba, Ibaraki, 305-8564 Japan
Search for more papers by this authorHideki Takagi,
Hideki Takagi
Device Technology Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Namiki 1-2-1, Tsukuba, Ibaraki, 305-8564 Japan
Search for more papers by this authorBook Editor(s):Masayoshi Esashi,
Masayoshi Esashi
Search for more papers by this authorSummary
Wafer direct bonding was first developed in order to fabricate silicon-on-insulator (SOI) wafers. Smart Cut process is suitable for thinner SOI wafers. Hydrophilic wafer bonding is a method to bond wafers using hydrogen bonds between – OH groups on hydrophilic surface of wafers. This method is often called as “wafer direct bonding” or “wafer fusion bonding.” In the method, the wafers to be bonded are cleaned by chemical solutions such as NH3/H2O2 and H2SO4/H2O2 mixture. The surface roughness of the wafers is important to achieve the bonding. The surface activated bonding (SAB) is originally based on a simple idea that atoms on two clean surfaces can make strong interatomic bonds even at room temperature when they are mated. SAB originally uses cleaning of material surfaces in vacuum by sputter etching using high-energy ion/atom beam of inert gases. The concept of SAB has been expanded in order to bond wide range of materials.
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