Chapter 11
Anodic Bonding
Masayoshi Esashi,
Masayoshi Esashi
Tohoku University, Micro System Integration Center (μSIC), 519-1176 Aramaki-Aza-Aoba, Aoba-ku, Sendai, 980-0845 Japan
Search for more papers by this authorMasayoshi Esashi,
Masayoshi Esashi
Tohoku University, Micro System Integration Center (μSIC), 519-1176 Aramaki-Aza-Aoba, Aoba-ku, Sendai, 980-0845 Japan
Search for more papers by this authorBook Editor(s):Masayoshi Esashi,
Masayoshi Esashi
Search for more papers by this authorFirst published: 23 April 2021
Summary
Anodic bonding is used for bonding of glass to metals or semiconductors. The glass–Si anodic bonding has been used for packaged micro electro mechanical systems devices. Bonding in environment as vacuum is performed by transferring the contacted glass–Si into a chamber and by heating and applying the voltage. Thermal expansion of the glass should match with that of Si to prevent distortion after the bonding. Small distortion is caused by the space charge layer in the glass. The influences of the anodic bonding to the integrated circuit were studied. Anodic bonding can be used for bonding glass to materials as metal or semiconductor. The material should have close thermal expansion with the glass to prevent distortion after bonding. Glass wafers can be anodically bonded successfully on both sides of a double-side polished Si wafer. Etched part of Si wafer can be filled with glass by a glass reflow process at high temperature.
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