Volume 191, Issue 2 pp. 628-632
Original Paper

Impurity-Related Excitonic Processes in CaF2 : Sr

V. Denks

V. Denks

Institute of Physics, University of Tartu, Riia 142, 51014 Tartu, Estonia

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A. Kotlov

A. Kotlov

Institute of Physics, University of Tartu, Riia 142, 51014 Tartu, Estonia

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V. Nagirnyi

V. Nagirnyi

Institute of Physics, University of Tartu, Riia 142, 51014 Tartu, Estonia

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T. Savikhina

T. Savikhina

Institute of Physics, University of Tartu, Riia 142, 51014 Tartu, Estonia

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G.D. Jones

G.D. Jones

Department of Physics and Astronomy, University of Canterbury, PB 4800, Christchurch, 8200, New Zealand

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Abstract

Excitation and emission spectra of CaF2:Sr single crystals with various strontium concentrations have been investigated by the method of luminescence spectroscopy. A new emission band peaking at 4.1 eV has been found and attributed to the radiative decay of excitons trapped near the Sr2+ impurity ions. The same spectral composition has the emission band arising from the recombination of conduction-band electrons with holes localised near Sr2+ ions (VKA(Sr2+) centres). A mechanism of exciton and hole trapping by homologous cation impurities of large ionic radii is suggested. It is concluded, that the doping of CaF2 by strontium leads to the increase in radiation stability of this optical material.

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