Fabrication of ZnSe Diodes with CdSe Quantum-Dot Layers by Molecular Beam Epitaxy

ZnSe p–n diodes with CdSe quantum-dot layers (QD diodes) were fabricated by molecular beam epitaxy. Green injection-electroluminescence was observed to the naked eye in a dark room. The green emissions at around 520 nm were observed in the photoluminescence of the QD diode structure; while, white injection-electroluminescence was observed to the naked eye in ZnSe p–n diodes without CdSe quantum dots. Therefore, we judged that we have observed green electroluminescence from the CdSe quantum dots. The device lifetimes were more than 10 h at 77 K.