Volume 203, Issue 1 pp. 183-187
Research Article

Transport Property Simulation of p-Type β-FeSi2

A. B. Filonov

A. B. Filonov

Belarussian State University of Informatics and Radioelectronics, P.Browka 6, 220027 Minsk, Republic of Belarus

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I. E. Tralle

I. E. Tralle

Belarussian State University of Informatics and Radioelectronics, P.Browka 6, 220027 Minsk, Republic of Belarus

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D. B. Migas

D. B. Migas

Belarussian State University of Informatics and Radioelectronics, P.Browka 6, 220027 Minsk, Republic of Belarus

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V. L. Shaposhnikov

V. L. Shaposhnikov

Belarussian State University of Informatics and Radioelectronics, P.Browka 6, 220027 Minsk, Republic of Belarus

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V. E. Borisenko

V. E. Borisenko

Belarussian State University of Informatics and Radioelectronics, P.Browka 6, 220027 Minsk, Republic of Belarus

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Abstract

Estimations of mobility versus temperature for semiconducting iron disilicide in relaxation time approximation have been performed. The results obtained have shown the influence of polar optical phonon scattering to be negligible. A power-law temperature dependence T−β with β > 3/2 in the high-temperature region can be obtained due to acoustic and nonpolar phonon scatterings. The power of the exponent is strictly affected by neutral impurity scattering as well which, in our opinion, may be connected with the crystalline purity.

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