Transport Property Simulation of p-Type β-FeSi2
Abstract
Estimations of mobility versus temperature for semiconducting iron disilicide in relaxation time approximation have been performed. The results obtained have shown the influence of polar optical phonon scattering to be negligible. A power-law temperature dependence T−β with β > 3/2 in the high-temperature region can be obtained due to acoustic and nonpolar phonon scatterings. The power of the exponent is strictly affected by neutral impurity scattering as well which, in our opinion, may be connected with the crystalline purity.