Insulated Gate Bipolar Transistors
First published: 27 December 1999
Abstract
The sections in this article are
- 1 Forward Drop
- 2 Switching Speed and Controllable Switching Trajectories
- 3 Reverse Blocking
- 4 Device Failure
- 5 Device Paralleling
- 6 Lifetime Killing
- 7 Numerical Modeling of the IGBT
- 8 Further Research