Insulated Gate Bipolar Transistors

C. V. Godbold

C. V. Godbold

University of South Carolina

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First published: 27 December 1999

Abstract

The sections in this article are

  • 1 Forward Drop
  • 2 Switching Speed and Controllable Switching Trajectories
  • 3 Reverse Blocking
  • 4 Device Failure
  • 5 Device Paralleling
  • 6 Lifetime Killing
  • 7 Numerical Modeling of the IGBT
  • 8 Further Research

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