Volume 6, Issue 3 2270020
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Mapping Conductance and Switching Behavior of Graphene Devices In Situ (Small Methods 3/2022)

Ondrej Dyck

Ondrej Dyck

Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, 37830 USA

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Jacob L. Swett

Jacob L. Swett

Department of Materials, University of Oxford, Oxford, OX1 3PH UK

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Charalambos Evangeli

Charalambos Evangeli

Department of Materials, University of Oxford, Oxford, OX1 3PH UK

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Andrew R. Lupini

Andrew R. Lupini

Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, 37830 USA

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Jan A. Mol

Jan A. Mol

Department of Materials, University of Oxford, Oxford, OX1 3PH UK

School of Physics and Astronomy, Queen Mary University of London, London, E1 4NS UK

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Stephen Jesse

Stephen Jesse

Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, 37830 USA

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First published: 21 March 2022

Graphical Abstract

Inside Back Cover

In article number 2101245, Dyck and co-workers demonstrated that by using graphene as the deposition substrate, hydrocarbon contaminants primarily diffuse along the surface at high temperatures. This property enables a surface barrier to block the ingress of contaminant material. Usually, scaling direct-write lithography techniques to the atomic scale faces a significant challenge from unwanted contaminant materials. Here, a reaction-diffusion model is introduced to describe the observed diffusion.

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