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On the Origin of Wake-Up and Antiferroelectric-Like Behavior in Ferroelectric Hafnium Oxide
First published: 17 May 2021
Graphical Abstract
With the help of transmission Kikuchi diffraction the major physical mechanism of antiferroelectric-like behavior as well as of the wake-up effect is determined by Maximilian Lederer, Konrad Seidel, and co-workers in article number 2100086. Furthermore, guidelines on how to influence this behavior by crystallographic texture and adjacent layers, as well as process conditions are identified. Finally, electric-field-induced crystallization is discovered as a new effect in hafnium oxide thin films.
