Volume 15, Issue 5 2170019
Cover Picture
Free Access

Atomistic Understanding of the Ferroelectric Properties of a Wurtzite-Structure (AlN)n/(ScN)m Superlattice

Kun Hee Ye

Kun Hee Ye

Electronic Materials Research Center, Korea Institute of Science and Technology, 5 Hwarang-ro 14-gil, Seongbuk-gu, Seoul, 02792 Korea

Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul, 08226 Korea

Search for more papers by this author
Gyuseung Han

Gyuseung Han

Electronic Materials Research Center, Korea Institute of Science and Technology, 5 Hwarang-ro 14-gil, Seongbuk-gu, Seoul, 02792 Korea

Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul, 08226 Korea

Search for more papers by this author
In Won Yeu

In Won Yeu

Electronic Materials Research Center, Korea Institute of Science and Technology, 5 Hwarang-ro 14-gil, Seongbuk-gu, Seoul, 02792 Korea

Search for more papers by this author
Cheol Seong Hwang

Corresponding Author

Cheol Seong Hwang

Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul, 08226 Korea

Search for more papers by this author
Jung-Hae Choi

Corresponding Author

Jung-Hae Choi

Electronic Materials Research Center, Korea Institute of Science and Technology, 5 Hwarang-ro 14-gil, Seongbuk-gu, Seoul, 02792 Korea

Search for more papers by this author
First published: 17 May 2021

Graphical Abstract

In article number 2100009, the ab initio calculations by Cheol Seong Hwang, Jung-Hae Choi, and co-workers show that wurtzite-type AlN can have a suitable range of ferroelectric switching barrier (Ea) and spontaneous polarization (Ps) by forming superlattice structures with ScN. The Ea is dominated by the local structure instability, while the Ps is significantly affected by the structural parameters and the Born effective charge.

The full text of this article hosted at iucr.org is unavailable due to technical difficulties.