Synthesis, Crystal Structure, and Physical Properties of BaSnS2
Wilarachchige D. C. B. Gunatilleke
Department of Physics, University of South Florida, Tampa, FL, 33620 USA
Search for more papers by this authorAndrew F. May
Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN, 37831 USA
Search for more papers by this authorAngela R. Hight Walker
Nanoscale Device Characterization Division, National Institute of Standards and Technology (NIST), Gaithersburg, MD, 20899 USA
Search for more papers by this authorAdam J. Biacchi
Nanoscale Device Characterization Division, National Institute of Standards and Technology (NIST), Gaithersburg, MD, 20899 USA
Search for more papers by this authorCorresponding Author
George S. Nolas
Department of Physics, University of South Florida, Tampa, FL, 33620 USA
Search for more papers by this authorWilarachchige D. C. B. Gunatilleke
Department of Physics, University of South Florida, Tampa, FL, 33620 USA
Search for more papers by this authorAndrew F. May
Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN, 37831 USA
Search for more papers by this authorAngela R. Hight Walker
Nanoscale Device Characterization Division, National Institute of Standards and Technology (NIST), Gaithersburg, MD, 20899 USA
Search for more papers by this authorAdam J. Biacchi
Nanoscale Device Characterization Division, National Institute of Standards and Technology (NIST), Gaithersburg, MD, 20899 USA
Search for more papers by this authorCorresponding Author
George S. Nolas
Department of Physics, University of South Florida, Tampa, FL, 33620 USA
Search for more papers by this authorAbstract
Phase-pure BaSnS2, with space group P21/c, is synthesized, and the structural and physical properties are investigated. Thermal properties and optical measurements are reported for the first time. The Debye temperature and Sommerfeld coefficient are obtained from temperature-dependent heat capacity measurements, the latter indicating that BaSnS2 is an electrical insulator. A direct bandgap of 2.4 eV is obtained from diffuse reflectance and photoluminescence spectroscopy. The findings herein lay the foundation for understanding the physical properties of this material and are part of a continuing effort to investigate previously unexplored ternary chalcogenides.
Conflict of Interest
The authors declare no conflict of interest.
Open Research
Data Availability Statement
The data that support the findings of this study are available from the corresponding author upon reasonable request.
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