Volume 220, Issue 16 2200871

Research Article

Investigation of Electrical Properties of N-Polar AlGaN/AlN Heterostructure Field-Effect Transistors

Daisuke Inahara

Department of Electrical and Electronic Engineering, Yamaguchi University, 2 -16-1 Tokiwadai, Ube, Yamaguchi, 755-8611 Japan

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Shunsuke Matsuda,

Shunsuke Matsuda

Department of Electrical and Electronic Engineering, Yamaguchi University, 2 -16-1 Tokiwadai, Ube, Yamaguchi, 755-8611 Japan

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Wataru Matsumura,

Wataru Matsumura

Department of Electrical and Electronic Engineering, Yamaguchi University, 2 -16-1 Tokiwadai, Ube, Yamaguchi, 755-8611 Japan

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Ryo Okuno,

Ryo Okuno

Department of Electrical and Electronic Engineering, Yamaguchi University, 2 -16-1 Tokiwadai, Ube, Yamaguchi, 755-8611 Japan

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Koki Hanasaku,

Koki Hanasaku

Department of Electrical and Electronic Engineering, Yamaguchi University, 2 -16-1 Tokiwadai, Ube, Yamaguchi, 755-8611 Japan

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Taketo Kowaki,

Taketo Kowaki

Department of Electrical and Electronic Engineering, Yamaguchi University, 2 -16-1 Tokiwadai, Ube, Yamaguchi, 755-8611 Japan

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Minagi Miyamoto,

Minagi Miyamoto

Department of Electrical and Electronic Engineering, Yamaguchi University, 2 -16-1 Tokiwadai, Ube, Yamaguchi, 755-8611 Japan

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Yongzhao Yao,

Yongzhao Yao

Japan Fine Ceramics Center, 2-4-1 Mutsuno, Atsuta, Nagoya, Aichi, 456-0023 Japan

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Yukari Ishikawa,

Yukari Ishikawa

Japan Fine Ceramics Center, 2-4-1 Mutsuno, Atsuta, Nagoya, Aichi, 456-0023 Japan

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Atsushi Tanaka,

Atsushi Tanaka

Institute of Materials and Systems for Sustainability (IMaSS), Nagoya University, Furocho, Chikusa, Nagoya, Aichi, 464-8601 Japan

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Yoshio Honda,

Yoshio Honda

Institute of Materials and Systems for Sustainability (IMaSS), Nagoya University, Furocho, Chikusa, Nagoya, Aichi, 464-8601 Japan

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Shugo Nitta,

Shugo Nitta

Institute of Materials and Systems for Sustainability (IMaSS), Nagoya University, Furocho, Chikusa, Nagoya, Aichi, 464-8601 Japan

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Hiroshi Amano,

Hiroshi Amano

Institute of Materials and Systems for Sustainability (IMaSS), Nagoya University, Furocho, Chikusa, Nagoya, Aichi, 464-8601 Japan

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Satoshi Kurai,

Satoshi Kurai

Department of Electrical and Electronic Engineering, Yamaguchi University, 2 -16-1 Tokiwadai, Ube, Yamaguchi, 755-8611 Japan

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Narihito Okada,

Corresponding Author

Narihito Okada

[email protected]

orcid.org/0000-0002-7518-3505

Department of Electrical and Electronic Engineering, Yamaguchi University, 2 -16-1 Tokiwadai, Ube, Yamaguchi, 755-8611 Japan

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Yoichi Yamada,

Yoichi Yamada

Department of Electrical and Electronic Engineering, Yamaguchi University, 2 -16-1 Tokiwadai, Ube, Yamaguchi, 755-8611 Japan

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Daisuke Inahara,

Daisuke Inahara

Department of Electrical and Electronic Engineering, Yamaguchi University, 2 -16-1 Tokiwadai, Ube, Yamaguchi, 755-8611 Japan

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Shunsuke Matsuda,

Shunsuke Matsuda

Department of Electrical and Electronic Engineering, Yamaguchi University, 2 -16-1 Tokiwadai, Ube, Yamaguchi, 755-8611 Japan

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Wataru Matsumura,

Wataru Matsumura

Department of Electrical and Electronic Engineering, Yamaguchi University, 2 -16-1 Tokiwadai, Ube, Yamaguchi, 755-8611 Japan

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Ryo Okuno,

Ryo Okuno

Department of Electrical and Electronic Engineering, Yamaguchi University, 2 -16-1 Tokiwadai, Ube, Yamaguchi, 755-8611 Japan

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Koki Hanasaku,

Koki Hanasaku

Department of Electrical and Electronic Engineering, Yamaguchi University, 2 -16-1 Tokiwadai, Ube, Yamaguchi, 755-8611 Japan

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Taketo Kowaki,

Taketo Kowaki

Department of Electrical and Electronic Engineering, Yamaguchi University, 2 -16-1 Tokiwadai, Ube, Yamaguchi, 755-8611 Japan

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Minagi Miyamoto,

Minagi Miyamoto

Department of Electrical and Electronic Engineering, Yamaguchi University, 2 -16-1 Tokiwadai, Ube, Yamaguchi, 755-8611 Japan

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Yongzhao Yao,

Yongzhao Yao

Japan Fine Ceramics Center, 2-4-1 Mutsuno, Atsuta, Nagoya, Aichi, 456-0023 Japan

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Yukari Ishikawa,

Yukari Ishikawa

Japan Fine Ceramics Center, 2-4-1 Mutsuno, Atsuta, Nagoya, Aichi, 456-0023 Japan

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Atsushi Tanaka,

Atsushi Tanaka

Institute of Materials and Systems for Sustainability (IMaSS), Nagoya University, Furocho, Chikusa, Nagoya, Aichi, 464-8601 Japan

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Yoshio Honda,

Yoshio Honda

Institute of Materials and Systems for Sustainability (IMaSS), Nagoya University, Furocho, Chikusa, Nagoya, Aichi, 464-8601 Japan

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Shugo Nitta,

Shugo Nitta

Institute of Materials and Systems for Sustainability (IMaSS), Nagoya University, Furocho, Chikusa, Nagoya, Aichi, 464-8601 Japan

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Hiroshi Amano,

Hiroshi Amano

Institute of Materials and Systems for Sustainability (IMaSS), Nagoya University, Furocho, Chikusa, Nagoya, Aichi, 464-8601 Japan

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Satoshi Kurai,

Satoshi Kurai

Department of Electrical and Electronic Engineering, Yamaguchi University, 2 -16-1 Tokiwadai, Ube, Yamaguchi, 755-8611 Japan

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Narihito Okada,

Corresponding Author

Narihito Okada

[email protected]

orcid.org/0000-0002-7518-3505

Department of Electrical and Electronic Engineering, Yamaguchi University, 2 -16-1 Tokiwadai, Ube, Yamaguchi, 755-8611 Japan

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Yoichi Yamada,

Yoichi Yamada

Department of Electrical and Electronic Engineering, Yamaguchi University, 2 -16-1 Tokiwadai, Ube, Yamaguchi, 755-8611 Japan

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First published: 16 May 2023

https://doi.org/10.1002/pssa.202200871

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Abstract

AlN-based field-effect transistors (FETs) enable high-breakdown voltage, high drain current, and high-temperature operation. To realize high-frequency devices, N-polar AlGaN/AlN heterostructure FETs are focused on. N-polar Al_0.1Ga_0.9N/Al_0.9Ga_0.1N/AlN FET is fabricated using metal–organic vapor-phase epitaxy, and its electrical characteristics are evaluated. An N-polar AlN layer is grown on a sapphire substrate with a misorientation angle of 2.0° toward m-axis, on which a 20 nm thick Al_0.9Ga_0.1N base layer and a 20 nm Al_0.1Ga_0.9N channel layer are grown. The static FET operation is confirmed to exhibit an n-channel and pinch-off. Normally, during operation with a turn-on voltage of −3.2 V, a high operating breakdown voltage of 620 V and high operating temperature of 280 °C are also confirmed.

Conflict of Interest

The authors declare no conflict of interest.

Open Research

Data Availability Statement

The data that support the findings of this study are available from the corresponding author upon reasonable request.

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Volume220, Issue16

Special Issue:Nitride Semiconductors

August 2023

2200871

This article also appears in:

Nitride Semiconductors (IWN 2022)

Investigation of Electrical Properties of N-Polar AlGaN/AlN Heterostructure Field-Effect Transistors

Abstract

Conflict of Interest

Open Research

Data Availability Statement

References

References

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Investigation of Electrical Properties of N-Polar AlGaN/AlN Heterostructure Field-Effect Transistors

Abstract

Conflict of Interest

Open Research

Data Availability Statement

References

References

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