Volume 217, Issue 12 1900993
Original Paper

Thermolytic Deposition of MoS2 Nanolayer for Si Solar Cell Applications

Suresh Satha

Suresh Satha

Department of Mechanical Engineering and Research Center of Industrial Technology, Jeonbuk National University, Jeonju, 54896 Republic of Korea

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Rajkumar Sahu

Rajkumar Sahu

Department of Mechanical Engineering and Research Center of Industrial Technology, Jeonbuk National University, Jeonju, 54896 Republic of Korea

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Jonghun Mun

Jonghun Mun

Department of Mechanical Engineering and Research Center of Industrial Technology, Jeonbuk National University, Jeonju, 54896 Republic of Korea

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Keunjoo Kim

Corresponding Author

Keunjoo Kim

Department of Mechanical Engineering and Research Center of Industrial Technology, Jeonbuk National University, Jeonju, 54896 Republic of Korea

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First published: 24 March 2020
Citations: 6

Abstract

The thermolytic deposition of MoS2 nanolayers for use in Si solar cells is investigated for which a thin MoS2 nanolayer is grown on a crystalline Si substrate by the thermolysis method. The deposited MoS2 nanolayer and Si substrate are annealed and show a transition from an amorphous to a crystalline phase as the annealing temperature increases. The MoS2 (002) crystalline peak at 14.04° appears at an annealing temperature of 450 °C. The heterojunction interface of MoS2/np-Si shows a mixed amorphous and crystalline phase. The Al/MoS2 has better Ohmic contact compared with Al/Si. The MoS2 nanolayer is introduced into the cell structure of a SiNx/a-Si(n)/MoS2/np-Si cell, the cell shows a photoconversion efficiency of 11.47%.

Conflict of Interest

The authors declare no conflict of interest.

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