The effectiveness of electron blocking layer in InGaN-based laser diodes with different indium content
X. Li
State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, No. A35, Qinghua East Road, Haidian District, Beijing 100083, P.R. China
Search for more papers by this authorCorresponding Author
D. G. Zhao
State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, No. A35, Qinghua East Road, Haidian District, Beijing 100083, P.R. China
Corresponding author: e-mail [email protected], Phone: +86-10-82304312, Fax: +86-10-82304242
Search for more papers by this authorD. S. Jiang
State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, No. A35, Qinghua East Road, Haidian District, Beijing 100083, P.R. China
Search for more papers by this authorP. Chen
State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, No. A35, Qinghua East Road, Haidian District, Beijing 100083, P.R. China
Search for more papers by this authorZ. S. Liu
State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, No. A35, Qinghua East Road, Haidian District, Beijing 100083, P.R. China
Search for more papers by this authorJ. J. Zhu
State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, No. A35, Qinghua East Road, Haidian District, Beijing 100083, P.R. China
Search for more papers by this authorJ. Yang
State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, No. A35, Qinghua East Road, Haidian District, Beijing 100083, P.R. China
Search for more papers by this authorW. Liu
State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, No. A35, Qinghua East Road, Haidian District, Beijing 100083, P.R. China
Search for more papers by this authorX. G. He
State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, No. A35, Qinghua East Road, Haidian District, Beijing 100083, P.R. China
Search for more papers by this authorX. J. Li
State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, No. A35, Qinghua East Road, Haidian District, Beijing 100083, P.R. China
Search for more papers by this authorF. Liang
State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, No. A35, Qinghua East Road, Haidian District, Beijing 100083, P.R. China
Search for more papers by this authorL. Q. Zhang
Key Laboratory of Nanodevices and Applications of CAS, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, No. 398, Ruoshui Road, Suzhou Industrial Park, Suzhou 215123, P.R. China
Search for more papers by this authorJ. P. Liu
Key Laboratory of Nanodevices and Applications of CAS, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, No. 398, Ruoshui Road, Suzhou Industrial Park, Suzhou 215123, P.R. China
Search for more papers by this authorH. Yang
Key Laboratory of Nanodevices and Applications of CAS, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, No. 398, Ruoshui Road, Suzhou Industrial Park, Suzhou 215123, P.R. China
Search for more papers by this authorX. Li
State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, No. A35, Qinghua East Road, Haidian District, Beijing 100083, P.R. China
Search for more papers by this authorCorresponding Author
D. G. Zhao
State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, No. A35, Qinghua East Road, Haidian District, Beijing 100083, P.R. China
Corresponding author: e-mail [email protected], Phone: +86-10-82304312, Fax: +86-10-82304242
Search for more papers by this authorD. S. Jiang
State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, No. A35, Qinghua East Road, Haidian District, Beijing 100083, P.R. China
Search for more papers by this authorP. Chen
State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, No. A35, Qinghua East Road, Haidian District, Beijing 100083, P.R. China
Search for more papers by this authorZ. S. Liu
State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, No. A35, Qinghua East Road, Haidian District, Beijing 100083, P.R. China
Search for more papers by this authorJ. J. Zhu
State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, No. A35, Qinghua East Road, Haidian District, Beijing 100083, P.R. China
Search for more papers by this authorJ. Yang
State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, No. A35, Qinghua East Road, Haidian District, Beijing 100083, P.R. China
Search for more papers by this authorW. Liu
State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, No. A35, Qinghua East Road, Haidian District, Beijing 100083, P.R. China
Search for more papers by this authorX. G. He
State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, No. A35, Qinghua East Road, Haidian District, Beijing 100083, P.R. China
Search for more papers by this authorX. J. Li
State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, No. A35, Qinghua East Road, Haidian District, Beijing 100083, P.R. China
Search for more papers by this authorF. Liang
State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, No. A35, Qinghua East Road, Haidian District, Beijing 100083, P.R. China
Search for more papers by this authorL. Q. Zhang
Key Laboratory of Nanodevices and Applications of CAS, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, No. 398, Ruoshui Road, Suzhou Industrial Park, Suzhou 215123, P.R. China
Search for more papers by this authorJ. P. Liu
Key Laboratory of Nanodevices and Applications of CAS, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, No. 398, Ruoshui Road, Suzhou Industrial Park, Suzhou 215123, P.R. China
Search for more papers by this authorH. Yang
Key Laboratory of Nanodevices and Applications of CAS, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, No. 398, Ruoshui Road, Suzhou Industrial Park, Suzhou 215123, P.R. China
Search for more papers by this authorAbstract
The effects of Al composition in p-type AlGaN electron blocking layer (EBL) on electron leakage and device performance in InGaN-based quantum well (QW) laser diodes (LDs) are numerically investigated in connection with the depth of QWs. It is found that the effectiveness of EBL in blocking electron leakage depends much on Al content in EBL and In content in InGaN QWs. It is effective for low-In-content InGaN QW LDs to add moderate Al in AlGaN EBL, while it is hardly helpful and even harmful for high-In-content InGaN QW LDs to increase Al content. In addition, it is found that too much Al in EBL is unfavorable for all LDs due to the downward conduction band-bending in the last quantum barrier (LQB) layer.
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