Volume 213, Issue 8 pp. 2176-2182
Original Paper

Improvement in thermoelectric performance of In6Se7 by substitution of Sn for In

Min Cheng

Min Cheng

Materials Science and Engineering College, Taiyuan University of Technology, Taiyuan, 030024 P.R. China

School of Materials, Ningbo University of Technology, Ningbo, 315016 P.R. China

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Shaoping Chen

Corresponding Author

Shaoping Chen

Materials Science and Engineering College, Taiyuan University of Technology, Taiyuan, 030024 P.R. China

Corresponding author: e-mail [email protected], Phone: +86-574-87080504, Fax: +86-574-87080504

e-mail [email protected]

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Zhengliang Du

Zhengliang Du

School of Materials, Ningbo University of Technology, Ningbo, 315016 P.R. China

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Xianglian Liu

Xianglian Liu

School of Materials, Ningbo University of Technology, Ningbo, 315016 P.R. China

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Jiaolin Cui

Corresponding Author

Jiaolin Cui

School of Materials, Ningbo University of Technology, Ningbo, 315016 P.R. China

Corresponding author: e-mail [email protected], Phone: +86-574-87080504, Fax: +86-574-87080504

e-mail [email protected]

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First published: 29 February 2016
Citations: 9

Abstract

In this work we have observed a remarkable improvement in the thermoelectric (TE) performance of In6–xSnxSe7 (ZT = ∼0.28 at x = 0.1, 833 K) compared to that of pristine In6Se7 (ZT = 0.015 at 640 K). This improvement is mainly attributed to the creation of active donor defects SnIn3+ as Sn(4+) is energetically favorable to In+ sites. Although Sn (2+), which generates a defect SnIn as an acceptor when it is incorporated into the In3+ sites, has a negative effect on the transport properties, the counter effect from Sn(4+) and Sn(2+) suggests that In6Se7-based alloys are prospectively good thermoelectric candidates if their chemical compositions are well optimized.

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