Volume 213, Issue 8 pp. 2254-2258

Original Paper

Dielectric enhancement of PbZr_0.3Ti_0.7O₃/LaNiO₃ multilayer thick film

Yasong Fan,

Yasong Fan

College of Materials Science and Engineering, Sichuan University, Chengdu, 610064 P.R. China

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Xiaoyang Chen,

Xiaoyang Chen

College of Materials Science and Engineering, Sichuan University, Chengdu, 610064 P.R. China

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Arzigul Habibul,

Arzigul Habibul

College of Materials Science and Engineering, Sichuan University, Chengdu, 610064 P.R. China

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Danyang Zhang,

Danyang Zhang

College of Materials Science and Engineering, Sichuan University, Chengdu, 610064 P.R. China

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Ping Yu,

Corresponding Author

Ping Yu

College of Materials Science and Engineering, Sichuan University, Chengdu, 610064 P.R. China

Corresponding author: e-mail [email protected], Phone: +86 28 85412415, Fax: +86 28 85452721

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Yasong Fan,

Yasong Fan

College of Materials Science and Engineering, Sichuan University, Chengdu, 610064 P.R. China

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Xiaoyang Chen,

Xiaoyang Chen

College of Materials Science and Engineering, Sichuan University, Chengdu, 610064 P.R. China

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Arzigul Habibul,

Arzigul Habibul

College of Materials Science and Engineering, Sichuan University, Chengdu, 610064 P.R. China

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Danyang Zhang,

Danyang Zhang

College of Materials Science and Engineering, Sichuan University, Chengdu, 610064 P.R. China

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Ping Yu,

Corresponding Author

Ping Yu

College of Materials Science and Engineering, Sichuan University, Chengdu, 610064 P.R. China

Corresponding author: e-mail [email protected], Phone: +86 28 85412415, Fax: +86 28 85452721

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First published: 17 March 2016

https://doi.org/10.1002/pssa.201533059

Citations: 3

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Abstract

Multilayer thick films (∼4 μm) with compositional PbZr_0.3Ti_0.7O₃/LaNiO₃ layers and one-layer PZT thick films were prepared on the silicon substrate by radio-frequency magnetron sputtering. PbZr_0.3Ti_0.7O₃/LaNiO₃ multilayer thick film are characterized by highly preferential (100)-oriented growth and columnar microstructure due to alternately introducing LaNiO₃ seeding layers. The effects of LaNiO₃ layers on microstructure and electrical properties of PbZr_0.3Ti_0.7O₃ thick films were investigated in detail. The results show that both PZT and PbZr_0.3Ti_0.7O₃/LaNiO₃ multilayer thick film were pure perovskite crystalline phase. The PbZr_0.3Ti_0.7O₃ film texture was dense and well adhered on the LaNiO₃ layer. PbZr_0.3Ti_0.7O₃/LaNiO₃ multilayer thick film possessed obvious enhanced dielectric properties compared with PZT thick film: ϵ_r ∼2450 (10 kHz) and tanδ ∼0.02 (10 kHz). Rayleigh law was used to analysis the behavior of the enhanced dielectric properties and the pinched-shaped polarization-electric field hysteresis loops. The larger Rayleigh parameter, α ∼51.1408 cm kV⁻¹ (1 kHz) indicates the larger extrinsic contribution to permittivity and strong domain-wall–defect charge interaction. The leakage current behaviors of the multilayer thick film were also investigated in detail.

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Volume213, Issue8

August 2016

Pages 2254-2258

Dielectric enhancement of PbZr_0.3Ti_0.7O₃/LaNiO₃ multilayer thick film

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Dielectric enhancement of PbZr_0.3Ti_0.7O₃/LaNiO₃ multilayer thick film