Tin selenide thin film with a simple cubic crystalline structure (SnSe-CUB) of unit cell dimension a = 11.9632 Å is obtained via chemical deposition on a tin sulfide (SnS-CUB) thin film base layer of simple cubic structure of a = 11.5873 Å. The SnSe-CUB films obtained this way are thermally stable while heating to 300 °C. Its optical band gap is 1.4 eV. A thin film of 200 nm in thickness of this material in a solar cell may lead to a light generated current density of 23 mA cm⁻² and a maximum of 29 mA cm⁻². Thin film of SnSe-CUB possesses p-type electrical conductivity of 5 × 10⁻⁵ Ω⁻¹ cm⁻¹, which is three orders of magnitude lower than that of SnSe films of orthorhombic crystalline structure. Overall, these characteristics make SnSe-CUB thin film a novel solar cell absorber material.

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Volume213, Issue8

August 2016

Pages 2229-2236

Cubic-structured tin selenide thin film as a novel solar cell absorber

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Cubic-structured tin selenide thin film as a novel solar cell absorber

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