Highly Pure and Luminescent Graphene Quantum Dots on Silicon Directly Grown by Chemical Vapor Deposition
Kun Huang
State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027 China
Search for more papers by this authorWanglin Lu
State Key Laboratory of Silicon Materials, Key Laboratory of Advanced Materials and Applications for Batteries of Zhejiang Province, Department of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027 China
Search for more papers by this authorCorresponding Author
Xuegong Yu
State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027 China
E-mail: [email protected], [email protected]Search for more papers by this authorChuanhong Jin
State Key Laboratory of Silicon Materials, Key Laboratory of Advanced Materials and Applications for Batteries of Zhejiang Province, Department of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027 China
Search for more papers by this authorCorresponding Author
Deren Yang
State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027 China
E-mail: [email protected], [email protected]Search for more papers by this authorKun Huang
State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027 China
Search for more papers by this authorWanglin Lu
State Key Laboratory of Silicon Materials, Key Laboratory of Advanced Materials and Applications for Batteries of Zhejiang Province, Department of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027 China
Search for more papers by this authorCorresponding Author
Xuegong Yu
State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027 China
E-mail: [email protected], [email protected]Search for more papers by this authorChuanhong Jin
State Key Laboratory of Silicon Materials, Key Laboratory of Advanced Materials and Applications for Batteries of Zhejiang Province, Department of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027 China
Search for more papers by this authorCorresponding Author
Deren Yang
State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027 China
E-mail: [email protected], [email protected]Search for more papers by this authorGraphical Abstract
Highly pure graphene quantum dots (GQDs) are directly grown on a silicon wafer by the chemical vapor deposition method. Two fluorescence and two phosphorescence components are emitted from the GQDs. The size-independent luminescence of the GQDs suggests that the luminescence originates from edge defects of the GQDs.
Supporting Information
As a service to our authors and readers, this journal provides supporting information supplied by the authors. Such materials are peer reviewed and may be re-organized for online delivery, but are not copy-edited or typeset. Technical support issues arising from supporting information (other than missing files) should be addressed to the authors.
Filename | Description |
---|---|
ppsc201500132-sup-0001-S1.pdf177.5 KB | Supplementary |
Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.
References
- 1L. B. Kish, Phys. Lett. A 2002, 305, 144.
- 2G. Roelkens, D. Vermeulen, D. Van Thourhout, R. Baets, S. Brision, P. Lyan, P. Gautier, J.-M. Fédéli, Appl. Phys. Lett. 2008, 92, 131101.
- 3S. McNab, N. Moll, Y. Vlasov, Opt. Express 2003, 11, 2927.
- 4G. T. Reed, G. Mashanovich, F. Y. Gardes, D. J. Thomson, Nat. Photon. 2010, 4, 518.
- 5S. Komiyama, O. Astafiev, V. Antonov, T. Kutsuwa, H. Hirai, Nature 2000, 403, 405.
- 6A. K. Geim, K. S. Novoselov, Nat. Mater. 2007, 6, 183.
- 7M. Bacon, S. J. Bradley, T. Nann, Part. Part. Syst. Charact. 2014, 31, 415.
- 8L. Tang, R. Ji, X. Cao, J. Lin, H. Jiang, X. Li, K. S. Teng, C. M. Luk, S. Zeng, J. Hao, S. P. Lau, ACS Nano 2012, 6, 5102.
- 9V. Gupta, N. Chaudhary, R. Srivastava, G. D. Sharma, R. Bhardwaj, S. Chand, J. Am. Chem. Soc. 2011, 133, 9960.
- 10L.-L. Li, J. Ji, R. Fei, C.-Z. Wang, Q. Lu, J.-R. Zhang, L.-P. Jiang, J.-J. Zhu, Adv. Funct. Mater. 2012, 22, 2971.
- 11S. Zhu, J. Zhang, S. Tang, C. Qiao, L. Wang, H. Wang, X. Liu, B. Li, Y. Li, W. Yu, X. Wang, H. Sun, B. Yang, Adv. Funct. Mater. 2012, 22, 4732.
- 12D. Pan, J. Zhang, Z. Li, M. Wu, Adv. Mater. 2010, 22, 734.
- 13K. Lingam, R. Podila, H. Qian, S. Serkiz, A. M. Rao, Adv. Funct. Mater. 2013, 23, 5062.
- 14S. H. Jin, D. H. Kim, G. H. Jun, S. H. Hong, S. Jeon, ACS Nano 2012, 7, 1239.
- 15S. Kim, S. W. Hwang, M.-K. Kim, D. Y. Shin, D. H. Shin, C. O. Kim, S. B. Yang, J. H. Park, E. Hwang, S.-H. Choi, G. Ko, S. Sim, C. Sone, H. J. Choi, S. Bae, B. H. Hong, ACS Nano 2012, 6, 8203.
- 16E. Meca, J. Lowengrub, H. Kim, C. Mattevi, V. B. Shenoy, Nano Lett. 2013, 13, 5692.
- 17S. Park, J. An, R. D. Piner, I. Jung, D. Yang, A. Velamakanni, S. T. Nguyen, R. S. Ruoff, Chem. Mater. 2008, 20, 6592.
- 18X. Li, X. Wang, L. Zhang, S. Lee, H. Dai, Science 2008, 319, 1229.
- 19S. Zhu, J. Zhang, C. Qiao, S. Tang, Y. Li, W. Yuan, B. Li, L. Tian, F. Liu, R. Hu, H. Gao, H. Wei, H. Zhang, H. Sun, B. Yang, Chem. Commun. 2011, 47, 6858.
- 20Y. Li, Y. Hu, Y. Zhao, G. Shi, L. Deng, Y. Hou, L. Qu, Adv. Mater. 2011, 23, 776.
- 21F. Tuinstra, J. L. Koenig, J. Chem. Phys. 1970, 53, 1126.
- 22A. C. Ferrari, J. C. Meyer, V. Scardaci, C. Casiraghi, M. Lazzeri, F. Mauri, S. Piscanec, D. Jiang, K. S. Novoselov, S. Roth, A. K. Geim, Phys. Rev. Lett. 2006, 97, 187401.
- 23J. Díaz, G. Paolicelli, S. Ferrer, F. Comin, Phys. Rev. B 1996, 54, 8064.
- 24A. Guermoune, T. Chari, F. Popescu, S. S. Sabri, J. Guillemette, H. S. Skulason, T. Szkopek, M. Siaj, Carbon 2011, 49, 4204.
- 25Z. Sun, Z. Yan, J. Yao, E. Beitler, Y. Zhu, J. M. Tour, Nature 2010, 468, 549.
- 26H. Kim, I. Song, C. Park, M. Son, M. Hong, Y. Kim, J. S. Kim, H.-J. Shin, J. Baik, H. C. Choi, ACS Nano 2013, 7, 6575.
- 27W. Zhang, P. Wu, Z. Li, J. Yang, J. Phys. Chem. C 2011, 115, 17782.
- 28G. Hong, Q.-H. Wu, J. Ren, S.-T. Lee, Appl. Phys. Lett. 2012, 100, 231604.
- 29G. Eda, Y. Y. Lin, C. Mattevi, H. Yamaguchi, H. A. Chen, I. S. Chen, C. W. Chen, M. Chhowalla, Adv. Mater. 2010, 22, 505.
- 30Y. Dong, J. Shao, C. Chen, H. Li, R. Wang, Y. Chi, X. Lin, G. Chen, Carbon 2012, 50, 4738.
- 31Y. Dong, C. Chen, X. Zheng, L. Gao, Z. Cui, H. Yang, C. Guo, Y. Chi, C. M. Li, J. Mater. Chem. 2012, 22, 8764.
- 32D. Pan, J. Zhang, Z. Li, C. Wu, X. Yan, M. Wu, Chem. Commun. 2010, 46, 3681.
- 33S. K. Cushing, M. Li, F. Huang, N. Wu, ACS Nano 2014, 8, 1002.
- 34M. L. Mueller, X. Yan, J. A. McGuire, L. S. Li, Nano Lett. 2010, 10, 2679.
- 35L. Tang, R. Ji, X. Li, K. S. Teng, S. P. Lau, Part. Part. Syst. Charact. 2013, 30, 523.
- 36L.-S. Li, X. Yan, J. Phys. Chem. Lett. 2010, 1, 2572.
- 37F. Banhart, J. Kotakoski, A. V. Krasheninnikov, ACS Nano 2011, 5, 26.
- 38Y. Chen, J. Li, X. Yang, Z. Zhou, C. Q. Sun, J. Phys. Chem. C 2011, 115, 23338.
- 39L. R. Radovic, B. Bockrath, J. Am. Chem. Soc. 2005, 127, 5917.
- 40R. Hoffmann, J. Am. Chem. Soc. 1968, 90, 1475.