Volume 33, Issue 1 pp. 8-14
Communication

Highly Pure and Luminescent Graphene Quantum Dots on Silicon Directly Grown by Chemical Vapor Deposition

Kun Huang

Kun Huang

State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027 China

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Wanglin Lu

Wanglin Lu

State Key Laboratory of Silicon Materials, Key Laboratory of Advanced Materials and Applications for Batteries of Zhejiang Province, Department of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027 China

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Xuegong Yu

Corresponding Author

Xuegong Yu

State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027 China

E-mail: [email protected], [email protected]Search for more papers by this author
Chuanhong Jin

Chuanhong Jin

State Key Laboratory of Silicon Materials, Key Laboratory of Advanced Materials and Applications for Batteries of Zhejiang Province, Department of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027 China

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Deren Yang

Corresponding Author

Deren Yang

State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027 China

E-mail: [email protected], [email protected]Search for more papers by this author
First published: 07 December 2015
Citations: 27

Graphical Abstract

Highly pure graphene quantum dots (GQDs) are directly grown on a silicon wafer by the chemical vapor deposition method. Two fluorescence and two phosphorescence components are emitted from the GQDs. The size-independent luminescence of the GQDs suggests that the luminescence originates from edge defects of the GQDs.

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