Optoelectronic properties of thermally coated tin selenide thin films for photovoltaics
Nisar Ali
Department of Physics, Government Post graduate Jahanzeb College Saidu Sharif Swat, Swat, Pakistan
Department of Physics, Abdul Wali Khan University Mardan, Mardan, Pakistan
Search for more papers by this authorUmar Sharif
Department of Physics, Faculty of Science, University of Malakand, Chakdara Lower Dir, Pakistan
Search for more papers by this authorNaeem Shahzad
Department of Civil Engineering, National University of Sciences and Technology, Islamabad, Pakistan
Search for more papers by this authorAbul Kalam
Department of Chemistry, Faculty of Science, King Khalid University, Abha, Saudi Arabia
Research Center for Advanced Materials Science (RCAMS), King Khalid University, Abha, Saudi Arabia
Search for more papers by this authorAbdullah Al-Sehemi
Department of Chemistry, Faculty of Science, King Khalid University, Abha, Saudi Arabia
Research Center for Advanced Materials Science (RCAMS), King Khalid University, Abha, Saudi Arabia
Search for more papers by this authorCorresponding Author
Hussein Alrobei
Department of Mechanical Engineering, College of Engineering, Prince Sattam Bin Abdulaziz University, AlKharj, Saudi Arabia
Correspondence
Hussein Alrobei, Department of Mechanical Engineering, College of Engineering, Prince Sattam Bin Abdulaziz University, AlKharj 11942, Saudi Arabia.
Email: [email protected]
Search for more papers by this authorAmir Khesro
Department of Physics, Abdul Wali Khan University Mardan, Mardan, Pakistan
Search for more papers by this authorNisar Ali
Department of Physics, Government Post graduate Jahanzeb College Saidu Sharif Swat, Swat, Pakistan
Department of Physics, Abdul Wali Khan University Mardan, Mardan, Pakistan
Search for more papers by this authorUmar Sharif
Department of Physics, Faculty of Science, University of Malakand, Chakdara Lower Dir, Pakistan
Search for more papers by this authorNaeem Shahzad
Department of Civil Engineering, National University of Sciences and Technology, Islamabad, Pakistan
Search for more papers by this authorAbul Kalam
Department of Chemistry, Faculty of Science, King Khalid University, Abha, Saudi Arabia
Research Center for Advanced Materials Science (RCAMS), King Khalid University, Abha, Saudi Arabia
Search for more papers by this authorAbdullah Al-Sehemi
Department of Chemistry, Faculty of Science, King Khalid University, Abha, Saudi Arabia
Research Center for Advanced Materials Science (RCAMS), King Khalid University, Abha, Saudi Arabia
Search for more papers by this authorCorresponding Author
Hussein Alrobei
Department of Mechanical Engineering, College of Engineering, Prince Sattam Bin Abdulaziz University, AlKharj, Saudi Arabia
Correspondence
Hussein Alrobei, Department of Mechanical Engineering, College of Engineering, Prince Sattam Bin Abdulaziz University, AlKharj 11942, Saudi Arabia.
Email: [email protected]
Search for more papers by this authorAmir Khesro
Department of Physics, Abdul Wali Khan University Mardan, Mardan, Pakistan
Search for more papers by this authorFunding information: King Khalid University, Grant/Award Number: RGP/152/42
Summary
In this study, 490 nm thin tin selenide thin films were deposited by facile co-evaporation techniques using Sn and Se sources on a clean glass substrate. The thin films were annealed at moderate annealing temperature followed by characterization and analysis. The thin annealed films possess polycrystalline nature and orthorhombic structure with an average grain size of 130 nm. The band gap assessed from absorption spectra for the highly annealed sample was 1.52 eV. The resistivity and sheet resistance were measured with four-probe techniques and the sheet resistance was =1.362 × 104 ohm for the highly annealed film.
CONFLICT OF INTERESTS
The authors declare that they have no known competing financial interests or personal relationships that could have appeared to influence the work reported in this paper.
Open Research
DATA AVAILABILITY STATEMENT
The data that support the findings of this study are available from the corresponding author upon reasonable request.
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