Funding information: National Natural Science Foundation of China, Grant/Award Numbers: 11404322, 11604067, 51805048; Natural Science Foundation of the Jiangsu Higher Education Institutions of China, Grant/Award Number: 18KJD140005

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Summary

In this study, we have successfully developed an industrially feasible stack rear Al₂O₃/SiN_x and front SiO₂/SiN_x passivation layer PERC solar cells fabrication method based on the existing PERC sc-silicon solar cells production line. The manufacturing parameters of the deposition processes were adapted to get the best passivation effect. The front SiO₂/SiN_x passivation layer deposition parameters were researched for the best front passivation effect. The fabrication parameters of the first high refractive index SiN_x layer were improved. And a new thin low refractive index SiN_x capping layer at SiO₂/SiN_x interface was introduced. Meanwhile, the stack rear Al₂O₃/SiN_x layer structure with double SiN_x layers was also researched, which exhibited good passivation results for the rich hydrogen content in high refractive index SiN_x layer. The industrial stack passivation layers PERCs with new thin low refractive index SiN_x capping layer possess good performances with an efficiency of 22.15%.

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DATA AVAILABILITY STATEMENT

The data that support the findings of this study are available from the corresponding author upon reasonable request.

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Improved Al₂O₃/SiN_x and SiO₂/SiN_x stack passivation layer structure PERC sc-silicon solar cells on mass production line

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Improved Al₂O₃/SiN_x and SiO₂/SiN_x stack passivation layer structure PERC sc-silicon solar cells on mass production line