Volume 52, Issue 10 pp. 4903-4917
ORIGINAL ARTICLE

Analysis and design of voltage-source parallel resonant class E frequency multiplier

Tian Li

Tian Li

School of Microelectronics and Communication Engineering, Chongqing University, Chong Qing, China

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Mingyu Li

Corresponding Author

Mingyu Li

School of Microelectronics and Communication Engineering, Chongqing University, Chong Qing, China

Correspondence

Mingyu Li, School of Microelectronics and Communication Engineering, Chongqing University, Chongqing 400044, China.

Email: [email protected]

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Zhijiang Dai

Zhijiang Dai

School of Microelectronics and Communication Engineering, Chongqing University, Chong Qing, China

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Jingzhou Pang

Jingzhou Pang

School of Microelectronics and Communication Engineering, Chongqing University, Chong Qing, China

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Weimin Shi

Weimin Shi

School of Microelectronics and Communication Engineering, Chongqing University, Chong Qing, China

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Yi Jin

Yi Jin

China Academy of Space Technology (Xi'an), Xi'an, China

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First published: 22 March 2024

Funding information: This work was supported in part by the National Natural Science Foundation of China under Grant 62171068, Grant 62001061, and Grant 62171065.

Abstract

In this paper, the analysis and design process of the voltage-source parallel resonant class E frequency multiplier with a 50% duty ratio is proposed. The proposed circuit adopts two series resonant filters for reducing the interference of harmonics to the output waveform and achieves zero-voltage switching (ZVS) and zero-voltage derivation switching (ZVDS) conditions. The design equations for the proposed circuit are given in detail. The new type class E frequency multiplier can operate at lower transistor voltage stress, higher operating frequency, and larger output power. Meanwhile, the volume and weight of the measured circuit are greatly decreased compared to the conventional class E frequency multiplier. To demonstrate the analysis process, the circuit operating at 1 MHz is fabricated and measured. Compared to the traditional class E frequency multiplier, the transistor peak voltage is reduced by 47.9%, the diameter of the resonant inductor core is decreased by 56.2%, and the measured efficiency can reach 95.1%. The theoretical and simulated results are all agreed with the experimental results.

DATA AVAILABILITY STATEMENT

Data sharing is not applicable to this article as no new data were created or analyzed in this study.

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