The illumination intensity and applied bias voltage on dielectric properties of au/polyvinyl alcohol (Co, Zn-doped)/n-Si Schottky barrier diodes
Corresponding Author
Habibe Uslu
Department of Physics, Faculty of Science and Arts, Gazi University, Ankara, Turkey
Department of Physics, Faculty of Science and Arts, Gazi University, Ankara, Turkey===Search for more papers by this authorŞemsettin Altındal
Department of Physics, Faculty of Science and Arts, Gazi University, Ankara, Turkey
Search for more papers by this authorTuncay Tunç
Science Education Department, Faculty of Education, Aksaray University, Aksaray, Turkey
Search for more papers by this authorİbrahim Uslu
Department of Chemistry Education, Selçuk University, Konya, Turkey
Search for more papers by this authorTofig S. Mammadov
Department of Physics, Faculty of Science and Arts, Gazi University, Ankara, Turkey
Department of Nano Technology, National Academy of Science, Institute of Physics, Baku, Azerbaijan
Search for more papers by this authorCorresponding Author
Habibe Uslu
Department of Physics, Faculty of Science and Arts, Gazi University, Ankara, Turkey
Department of Physics, Faculty of Science and Arts, Gazi University, Ankara, Turkey===Search for more papers by this authorŞemsettin Altındal
Department of Physics, Faculty of Science and Arts, Gazi University, Ankara, Turkey
Search for more papers by this authorTuncay Tunç
Science Education Department, Faculty of Education, Aksaray University, Aksaray, Turkey
Search for more papers by this authorİbrahim Uslu
Department of Chemistry Education, Selçuk University, Konya, Turkey
Search for more papers by this authorTofig S. Mammadov
Department of Physics, Faculty of Science and Arts, Gazi University, Ankara, Turkey
Department of Nano Technology, National Academy of Science, Institute of Physics, Baku, Azerbaijan
Search for more papers by this authorAbstract
The Au/polyvinyl alcohol (PVA) (Co, Zn-doped)/n-Si Schottky barrier diodes (SBDs) were exposed to various illumination intensities. Illumination effect on the dielectric properties has been investigated by using capacitance–voltage (C–V) and conductance–voltage (G/ω–V) characteristics at 1 MHz and room temperature. The values of dielectric constant (ε′), dielectric loss (ε″), loss tangent (tanδ), electric modulus (M′ and M″), and AC electrical conductivity (σAC) were found strongly intensity dependent on both the illumination levels and applied bias voltage especially in depletion and accumulation regions. Such bias and illumination dependency of these parameters can be explained on the basis of Maxwell–Wagner interfacial polarization and restructuring and reordering of charges at interface states. In addition, the ε′–V plots also show an intersection feature at ∼ 2.8 V and such behavior of the ε′–V plots appears as an abnormality compared with the conventional behavior of an ideal SBD. The obtained results revealed that illumination intensity enhances the conductivity of Au/PVA(Co, Zn-doped)/n-Si SBD. © 2010 Wiley Periodicals, Inc. J Appl Polym Sci, 2011
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