Volume 64, Issue 28 e202510928

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Inside Back Cover: A Simple Quinoid Building Block for Polymer Semiconductors with Tunable Polarity and High n-Type Thermoelectric Performance (Angew. Chem. Int. Ed. 28/2025)

Weipeng Sun

Shenzhen Key Laboratory of Printed Electronics, Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, Guangdong, 518055 China

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Sergio Gámez-Valenzuela,

Sergio Gámez-Valenzuela

Shenzhen Key Laboratory of Printed Electronics, Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, Guangdong, 518055 China

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Xiage Zhang,

Xiage Zhang

Shenzhen Key Laboratory of Printed Electronics, Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, Guangdong, 518055 China

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Jin-Woo Lee,

Jin-Woo Lee

Department of Chemical and Biomolecular Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141 Republic of Korea

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Zhicheng Zhong,

Zhicheng Zhong

Shenzhen Key Laboratory of Printed Electronics, Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, Guangdong, 518055 China

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Peng Wang,

Peng Wang

Shenzhen Key Laboratory of Printed Electronics, Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, Guangdong, 518055 China

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Suxiang Ma,

Suxiang Ma

Shenzhen Key Laboratory of Printed Electronics, Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, Guangdong, 518055 China

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Hanqiang Wang,

Hanqiang Wang

Shenzhen Key Laboratory of Printed Electronics, Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, Guangdong, 518055 China

Department of Chemistry and Guangdong Provincial Key Laboratory of Mathematical and Neural Dynamical Systems, Great Bay University, Dongguan, Guangdong, 523000 China

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Bumjoon J. Kim,

Bumjoon J. Kim

Department of Chemical and Biomolecular Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141 Republic of Korea

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Xugang Guo,

Corresponding Author

Xugang Guo

[email protected]

orcid.org/0000-0001-6193-637X

Shenzhen Key Laboratory of Printed Electronics, Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, Guangdong, 518055 China

E-mail: [email protected]

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Weipeng Sun,

Weipeng Sun

Shenzhen Key Laboratory of Printed Electronics, Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, Guangdong, 518055 China

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Sergio Gámez-Valenzuela,

Sergio Gámez-Valenzuela

Shenzhen Key Laboratory of Printed Electronics, Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, Guangdong, 518055 China

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Xiage Zhang,

Xiage Zhang

Shenzhen Key Laboratory of Printed Electronics, Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, Guangdong, 518055 China

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Jin-Woo Lee,

Jin-Woo Lee

Department of Chemical and Biomolecular Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141 Republic of Korea

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Zhicheng Zhong,

Zhicheng Zhong

Shenzhen Key Laboratory of Printed Electronics, Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, Guangdong, 518055 China

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Peng Wang,

Peng Wang

Shenzhen Key Laboratory of Printed Electronics, Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, Guangdong, 518055 China

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Suxiang Ma,

Suxiang Ma

Shenzhen Key Laboratory of Printed Electronics, Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, Guangdong, 518055 China

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Hanqiang Wang,

Hanqiang Wang

Shenzhen Key Laboratory of Printed Electronics, Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, Guangdong, 518055 China

Department of Chemistry and Guangdong Provincial Key Laboratory of Mathematical and Neural Dynamical Systems, Great Bay University, Dongguan, Guangdong, 523000 China

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Bumjoon J. Kim,

Bumjoon J. Kim

Department of Chemical and Biomolecular Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141 Republic of Korea

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Xugang Guo,

Corresponding Author

Xugang Guo

[email protected]

orcid.org/0000-0001-6193-637X

Shenzhen Key Laboratory of Printed Electronics, Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, Guangdong, 518055 China

E-mail: [email protected]

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First published: 28 May 2025

https://doi.org/10.1002/anie.202510928

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Graphical Abstract

Developing high-performance n-type polymers relies on simple, easily accessible building blocks with minimal steric hindrance and strong electron deficiency. Xugang Guo and co-workers report a quinoid building block, thieno[3,2-b]thiophene-2,5-dione (TTD), in their Research Article (e202501196). The TTD-based polymers exhibit tunable charge carrier polarity from p-type to ambipolar and ultimately to n-type upon thermal annealing, along with outstanding n-type thermoelectric performance.