Volume 64, Issue 30 e202505456
Research Article

Kelvin Probe Force Microscopy Reveals Spatially Resolved Charge-Transfer Mechanism in CdS/BiOBr S-scheme Heterojunction Photocatalyst

Zheng Meng

Zheng Meng

Laboratory of Solar Fuel, Faculty of Materials Science and Chemistry, China University of Geosciences, 68 Jincheng Street, Wuhan, 430078 P.R. China

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Jianjun Zhang

Jianjun Zhang

Laboratory of Solar Fuel, Faculty of Materials Science and Chemistry, China University of Geosciences, 68 Jincheng Street, Wuhan, 430078 P.R. China

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Haoyu Long

Haoyu Long

Laboratory of Solar Fuel, Faculty of Materials Science and Chemistry, China University of Geosciences, 68 Jincheng Street, Wuhan, 430078 P.R. China

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Prof. Hermenegildo García

Prof. Hermenegildo García

Instituto Universitario de Tecnología Química, (CSIC-UPV), Universitat Politècnica de València, Valencia, Spain

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Prof. Liuyang Zhang

Corresponding Author

Prof. Liuyang Zhang

Laboratory of Solar Fuel, Faculty of Materials Science and Chemistry, China University of Geosciences, 68 Jincheng Street, Wuhan, 430078 P.R. China

E-mail: [email protected], [email protected], [email protected]

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Prof. Bicheng Zhu

Corresponding Author

Prof. Bicheng Zhu

Laboratory of Solar Fuel, Faculty of Materials Science and Chemistry, China University of Geosciences, 68 Jincheng Street, Wuhan, 430078 P.R. China

E-mail: [email protected], [email protected], [email protected]

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Prof. Jiaguo Yu

Corresponding Author

Prof. Jiaguo Yu

Laboratory of Solar Fuel, Faculty of Materials Science and Chemistry, China University of Geosciences, 68 Jincheng Street, Wuhan, 430078 P.R. China

E-mail: [email protected], [email protected], [email protected]

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First published: 19 May 2025
Citations: 1

Graphical Abstract

In situ KPFM reveals charge-transfer mechanism in CdS/BiOBr S-scheme heterojunctions. Upon light illumination, the Fermi level (Ef) of n-type semiconductors rises, generating a built-in electric field that drives photogenerated carrier separation. Electrons accumulate on CdS, lowering its surface photovoltage (SPV), while holes accumulate on BiOBr, elevating its SPV above that of the bare semiconductors, highlighting efficient charge separation.

Abstract

S-scheme heterojunctions hold great promise for photocatalysis, yet a comprehensive understanding of their charge-transfer mechanisms remains limited. While time-resolved techniques have provided valuable insights, the spatial resolution of charge transfer at the material surface remains underexplored. Here, we employ Kelvin probe force microscopy (KPFM) to investigate the charge-transfer dynamics in S-scheme heterojunctions, revealing spatially resolved details. Our findings show that upon illumination, the Fermi level (Ef) of n-type semiconductors increases, but a built-in electric field (IEF) persists within the heterojunction. Electrons accumulate on the surface of the reduction semiconductor (RS), resulting in a surface photovoltage (SPV) lower than that of the individual semiconductor, while holes accumulate on the oxidation semiconductor (OS) surface, producing an SPV higher than that of the bare material. The S-scheme heterojunction leads to a remarkable increase in charge separation, with 11 additional photogenerated electrons and 3722 additional holes compared to the bare CdS and BiOBr. These results offer critical insights into the spatially resolved charge-transfer mechanisms of S-scheme heterojunctions.

Conflict of Interests

The authors declare no conflict of interest.

Data Availability Statement

The data that support the findings of this study are available from the corresponding author upon reasonable request.

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