Volume 60, Issue 16 pp. 9106-9113
Research Article

Ultralow Lattice Thermal Conductivity at Room Temperature in Cu4TiSe4

Biplab Koley

Biplab Koley

Department of Chemistry, IIT Kharagpur, Kharagpur, 721302 India

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Achintya Lakshan

Achintya Lakshan

Department of Chemistry, IIT Kharagpur, Kharagpur, 721302 India

These authors contributed equally to this work.

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Parul R. Raghuvanshi

Parul R. Raghuvanshi

Department of Metallurgical Eng. and Materials Science, IIT Bombay, Bombay, 400076 India

These authors contributed equally to this work.

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Charanpreet Singh

Charanpreet Singh

School of Physical Science, NISER Bhubneswar, Khurda, 752050 India

These authors contributed equally to this work.

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Amrita Bhattacharya

Corresponding Author

Amrita Bhattacharya

Department of Metallurgical Eng. and Materials Science, IIT Bombay, Bombay, 400076 India

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Partha P. Jana

Corresponding Author

Partha P. Jana

Department of Chemistry, IIT Kharagpur, Kharagpur, 721302 India

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First published: 04 November 2020
Citations: 37

Graphical Abstract

Cu4TiSe4 is a unique example of a non-toxic and low-cost material that exhibits a lattice ultra-low thermal conductivity of 0.19 Wm−1 K−1 at room temperature. The main contribution to the unusually low thermal conductivity is connected with the atomic lattice and its dynamics.

Abstract

Ultralow thermal conductivity draws great attention in a variety of fields of applications such as thermoelectrics and thermal barrier coatings. Herein, the crystal structure and transport properties of Cu4TiSe4 are reported. Cu4TiSe4 is a unique example of a non-toxic and low-cost material that exhibits a lattice ultra-low thermal conductivity of 0.19 Wm−1 K−1 at room temperature. The main contribution to the unusually low thermal conductivity is connected with the atomic lattice and its dynamics. This ultralow value of lattice thermal conductivity (kL) can be attributed to the presence of the localized modes of Cu, which partially hybridize with the Se atoms, which in turn leads to avoidance of crossing of acoustic phonon modes that reach the zone boundary with a reduced frequency. Like a phonon glass electron crystal, Cu4TiSe4 could also open a route to efficient thermoelectric materials, even, with chalcogenides of relatively high electrical resistivity and a large band gap, provided that their structures offer a sublattice with lightly bound cations.

Conflict of interest

The authors declare no conflict of interest.

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