Volume 131, Issue 34 pp. 12019-12028
Forschungsartikel

Significant Difference in Semiconducting Properties of Isomeric All-Acceptor Polymers Synthesized via Direct Arylation Polycondensation

Dr. Yang Wang

Corresponding Author

Dr. Yang Wang

Department of Materials Science and Engineering, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo, 152-8552 Japan

Current address: Emergent Molecular Function Research Team, Center for Emergent Matter Science (CEMS), RIKEN, 2-1 Hirosawa, Wako, Saitama, 351-0198 Japan

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Dr. Tsukasa Hasegawa

Dr. Tsukasa Hasegawa

Department of Materials Science and Engineering, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo, 152-8552 Japan

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Prof. Hidetoshi Matsumoto

Prof. Hidetoshi Matsumoto

Department of Materials Science and Engineering, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo, 152-8552 Japan

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Prof. Tsuyoshi Michinobu

Corresponding Author

Prof. Tsuyoshi Michinobu

Department of Materials Science and Engineering, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo, 152-8552 Japan

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First published: 18 June 2019
Citations: 7

Abstract

The direct arylation polycondensation (DArP) appeared as an efficient method for producing semiconducting polymers but often requires acceptor monomers with orienting or activating groups for the reactive carbon-hydrogen (C-H) bonds, which limits the choice of acceptor units. In this study, we describe a DArP for producing high-molecular-weight all-acceptor polymers composed of the acceptor monomers without any orienting or activating groups via a modified method using Pd/Cu co-catalysts. We thus obtained two isomeric all-acceptor polymers, P1 and P2, which have the same backbone and side-chains but different positions of the nitrogen atoms in the thiazole units. This subtle change significantly influences their optoelectronic, molecular packing, and charge-transport properties. P2 with a greater backbone torsion has favorable edge-on orientations and a high electron mobility μe of 2.55 cm2 V−1 s−1. Moreover, P2-based transistors show an excellent shelf-storage stability in air even after the storage for 1 month.

Conflict of interest

The authors declare no conflict of interest.

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