Volume 128, Issue 10 pp. 3464-3468
Zuschrift

Acid Treatment Enables Suppression of Electron–Hole Recombination in Hematite for Photoelectrochemical Water Splitting

Yi Yang

Yi Yang

Department of Chemistry and Biochemistry, University of California, Santa Cruz, Santa Cruz, CA, 95064 USA

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Mark Forster

Mark Forster

Department of Chemistry and Stephenson, The University of Liverpool, Liverpool, L69 7ZD UK

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Dr. Yichuan Ling

Dr. Yichuan Ling

Department of Chemistry and Biochemistry, University of California, Santa Cruz, Santa Cruz, CA, 95064 USA

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Dr. Gongming Wang

Dr. Gongming Wang

Department of Chemistry and Biochemistry, University of California, Santa Cruz, Santa Cruz, CA, 95064 USA

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Dr. Teng Zhai

Dr. Teng Zhai

Department of Chemistry and Biochemistry, University of California, Santa Cruz, Santa Cruz, CA, 95064 USA

School of Chemistry and Chemistry Engineering, Sun Yat-Sen University, Guangzhou, 510275 P.R. China

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Prof. Yexiang Tong

Prof. Yexiang Tong

School of Chemistry and Chemistry Engineering, Sun Yat-Sen University, Guangzhou, 510275 P.R. China

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Prof. Alexander J. Cowan

Corresponding Author

Prof. Alexander J. Cowan

Department of Chemistry and Stephenson, The University of Liverpool, Liverpool, L69 7ZD UK

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Prof. Yat Li

Corresponding Author

Prof. Yat Li

Department of Chemistry and Biochemistry, University of California, Santa Cruz, Santa Cruz, CA, 95064 USA

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First published: 05 February 2016
Citations: 28

Abstract

We report a strategy for efficient suppression of electron–hole recombination in hematite photoanodes. Acid-treated hematite showed a substantially enhanced photocurrent density compared to untreated samples. Electrochemical impedance spectroscopy studies revealed that the enhanced photocurrent is partly due to improved efficiency of charge separation. Transient absorption spectroscopic studies coupled to electrochemical measurements indicate that, in addition to improved bulk electrochemical properties, acid-treated hematite has significantly decreased surface electron–hole recombination losses owing to a greater yield of the trapped photoelectrons being extracted to the external circuit.

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