Volume 126, Issue 38 pp. 10354-10358
Zuschrift

High Correlation between Oxidation Loci on Graphene Oxide

Jinrong Yang

Jinrong Yang

Department Division of Interfacial Water and Key Laboratory of Interfacial Physics and Technology, Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201800 (China)

University of Chinese Academy of Sciences, Beijing, 100049 (China)

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Dr. Guosheng Shi

Corresponding Author

Dr. Guosheng Shi

Department Division of Interfacial Water and Key Laboratory of Interfacial Physics and Technology, Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201800 (China)

Guosheng Shi, Department Division of Interfacial Water and Key Laboratory of Interfacial Physics and Technology, Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201800 (China)

Yusong Tu, College of Physics Science and Technology, Yangzhou University, Jiangsu, 225009 and China Institute of Systems Biology, Shanghai University, Shanghai, 200444 (China)

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Dr. Yusong Tu

Corresponding Author

Dr. Yusong Tu

College of Physics Science and Technology, Yangzhou University, Jiangsu, 225009 and China Institute of Systems Biology, Shanghai University, Shanghai, 200444 (China)

Guosheng Shi, Department Division of Interfacial Water and Key Laboratory of Interfacial Physics and Technology, Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201800 (China)

Yusong Tu, College of Physics Science and Technology, Yangzhou University, Jiangsu, 225009 and China Institute of Systems Biology, Shanghai University, Shanghai, 200444 (China)

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Prof. Haiping Fang

Prof. Haiping Fang

Department Division of Interfacial Water and Key Laboratory of Interfacial Physics and Technology, Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201800 (China)

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First published: 13 July 2014
Citations: 23

This work is supported by NSFC (11290164 and 11105088), SNSFC (13ZR1447900), Shanghai University (HPC ZQ4000), the Supercomputer Center of the Chinese Academy of Sciences and the Shanghai Supercomputer Center of China. We thank Yi Gao and Pan Guo for helpful discussions and their crucial reading of this manuscript.

Abstract

Recent experiments have shown the coexistence of both large unoxidized and oxidized regions on graphene oxide (GO), but the underlying mechanism for the formation of the GO atomic structure remains unknown. Now, using density functional calculations, 52 oxidation pathways for local pyrene structures on GO were identified, and a kinetic profile for graphene oxidation with a high correlation between oxidation loci was proposed, which is different from the conventional view, which entails a random distribution of oxidation loci. The high correlation is an essential nature of graphene oxidation processes and can be attributed to three crucial effects: 1) breaking of delocalized π bonds, 2) steric hindrance, and 3) hydrogen-bond formation. This high correlation leads to the coexistence of both large unoxidized and oxidized regions on GO. Interestingly, even in oxidized regions on GO, some small areas of sp2-hybridized domains, similar to “islands”, can persist because of steric effects.

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