Multiple Nonvolatile Resistance States Tuned by Electric Pulses in the Hysteresis Temperature Range of 1T-TaS2
Corresponding Author
Yongchang Ma
School of Materials Science and Engineering, Tianjin University of Technology, Tianjin, 300384 China
Tianjin Key Lab for Photoelectric Materials and Devices, Tianjin, 300384 China
E-mail: [email protected]
Search for more papers by this authorDong Wu
Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808 China
Search for more papers by this authorYajun Li
School of Materials Science and Engineering, Tianjin University of Technology, Tianjin, 300384 China
Search for more papers by this authorRui Chen
School of Materials Science and Engineering, Tianjin University of Technology, Tianjin, 300384 China
Search for more papers by this authorCuimin Lu
School of Materials Science and Engineering, Tianjin University of Technology, Tianjin, 300384 China
Tianjin Key Lab for Photoelectric Materials and Devices, Tianjin, 300384 China
Search for more papers by this authorCorresponding Author
Yongchang Ma
School of Materials Science and Engineering, Tianjin University of Technology, Tianjin, 300384 China
Tianjin Key Lab for Photoelectric Materials and Devices, Tianjin, 300384 China
E-mail: [email protected]
Search for more papers by this authorDong Wu
Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808 China
Search for more papers by this authorYajun Li
School of Materials Science and Engineering, Tianjin University of Technology, Tianjin, 300384 China
Search for more papers by this authorRui Chen
School of Materials Science and Engineering, Tianjin University of Technology, Tianjin, 300384 China
Search for more papers by this authorCuimin Lu
School of Materials Science and Engineering, Tianjin University of Technology, Tianjin, 300384 China
Tianjin Key Lab for Photoelectric Materials and Devices, Tianjin, 300384 China
Search for more papers by this authorAbstract
Compared with systematically investigated resistance switching, nonvolatile multi-level memristors are highly desired due to their stochastic or analog ability for artificial intelligence. Here, electric-pulses-induced responses of 1T-TaS2 crystals in hysteresis temperature range are reported. These investigations clearly show that the resistance of the system can be precisely tuned by electric pulses (∼100 V cm−1), forming multiple nonvolatile states in less than 200 ns. The origin of these states and the occurrence of the obstinate triclinic phase activated by pulses are discussed and simulated, implying the rearrangements of the textures composed of commensurate charged-density-wave domains separated by discommensurabilities. The multiple nonvolatile resistance states activated conveniently by electric pulses may shed light on the potential applications of artificial synapse devices.
Conflict of Interest
The authors declare no conflict of interest.
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