Triple Synergism Effect of Ammonium Nitrilotriacetate on the Chemical Mechanical Polishing Performance of Ruthenium Barrier Layers
Ziwei He
School of Electronic Information Engineering, Hebei University of Technology, Tianjin, 300130 P. R. China
Search for more papers by this authorCorresponding Author
Jianwei Zhou
School of Electronic Information Engineering, Hebei University of Technology, Tianjin, 300130 P. R. China
E-mail: [email protected]; [email protected]
Search for more papers by this authorCorresponding Author
Yuhang Qi
School of Electronic Information Engineering, Hebei University of Technology, Tianjin, 300130 P. R. China
E-mail: [email protected]; [email protected]
Search for more papers by this authorChong Luo
School of Electronic Information Engineering, Hebei University of Technology, Tianjin, 300130 P. R. China
Search for more papers by this authorChenwei Wang
School of Electronic Information Engineering, Hebei University of Technology, Tianjin, 300130 P. R. China
Search for more papers by this authorJianghao Liu
School of Electronic Information Engineering, Hebei University of Technology, Tianjin, 300130 P. R. China
Search for more papers by this authorZiwei He
School of Electronic Information Engineering, Hebei University of Technology, Tianjin, 300130 P. R. China
Search for more papers by this authorCorresponding Author
Jianwei Zhou
School of Electronic Information Engineering, Hebei University of Technology, Tianjin, 300130 P. R. China
E-mail: [email protected]; [email protected]
Search for more papers by this authorCorresponding Author
Yuhang Qi
School of Electronic Information Engineering, Hebei University of Technology, Tianjin, 300130 P. R. China
E-mail: [email protected]; [email protected]
Search for more papers by this authorChong Luo
School of Electronic Information Engineering, Hebei University of Technology, Tianjin, 300130 P. R. China
Search for more papers by this authorChenwei Wang
School of Electronic Information Engineering, Hebei University of Technology, Tianjin, 300130 P. R. China
Search for more papers by this authorJianghao Liu
School of Electronic Information Engineering, Hebei University of Technology, Tianjin, 300130 P. R. China
Search for more papers by this authorAbstract
As the feature size of integrated circuits continues to decrease, ruthenium (Ru) has been suggested as the successor to traditional Ta/TaN bilayers for barrier layer materials due to its unique properties. This research delves into the effects of ammonium nitrilotriacetate (NTA(NH4)3) on the chemical mechanical polishing (CMP) performance of Ru in H2O2-based slurry. The removal rate (RR) of Ru surged from 47 to 890 Å min−1, marking an increase of about 17 times. The essence of this mechanism lies in the triple synergistic effects of NTA(NH4)3 in promoting ruthenium (Ru) removal: 1) The interaction between from NTA(NH4)3 and SiO2 abrasives; 2) The chelating action of [(NH4)N(CH2COO)3]2- from NTA(NH4)3 on Ru and its oxides; 3) The ammoniation and chelation of Ru and its oxides by from NTA(NH4)3, which enhance the dissolution and corrosion of oxidized Ru, making its removal during the barrier layer CMP process more efficient through mechanical means. This research introduces a synergistic approach for the effective removal of Ru, shedding light on potential applications of CMP in the field of the integrated circuits.
Conflict of Interest
The authors declare no conflict of interest.
Open Research
Data Availability Statement
The data that support the findings of this study are available from the corresponding author upon reasonable request.
Supporting Information
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