Volume 25, Issue 1 p. 263
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Relativistic corrections to the valence and conduction band edges of anisotropic semiconductors

J. Von Boehm

J. Von Boehm

Electron Physics Laboratory and Department of General Sciences, Helsinki University of Technology, SF-02150 Espoo 15, Finland

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H. M. Isomäki

H. M. Isomäki

Electron Physics Laboratory and Department of General Sciences, Helsinki University of Technology, SF-02150 Espoo 15, Finland

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First published: January 1984
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