EMRS-I – Contributed Article
Dopant diffusivity and solubility in nickel silicides
Abstract
Boron and Arsenic diffusion in implanted Ni2Si and NiSi layers has been studied using secondary ion mass spectrometry. These measurements show that As should not diffuse in the silicides at the temperatures used for silicidation. In contrast significant B diffusion is observed in both silicides at temperatures as low as 400°C. It is also observed that both dopants have higher solubilities in Ni2Si than in NiSi. B and As solubilities below 1.1020 at.cm-3 are measured in NiSi (© 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
