Growth rate model and doping metrology by atom probe tomography in silicon nanowire
Abstract
Silicon nanowires (SiNWs) with different surface number density are fabricated using Chemical Vapor Deposition (CVD) method by controlling the catalyst droplet number density with in-situ evaporation. For comparison, another type of SiNWs is fabricated by Molecular Beam Epitaxy (MBE) method. To study these two types of SiNWs a general growth rate model is presented. The fit curves from this model are consistent with our experimental data. In both growing conditions the SiNW growth rate as a function of their diameter are compared and discussed. The p-type SiNWs have also been prepared by adding diborane into precursor. The doping metrology in an individual SiNW is realized by laser assisted Atom Probe Tomography (APT). We have shown that the doping atoms (e.g. B) can incorporate into SiNW and an accurate quantification can be given (© 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
