Volume 216, Issue 17 1900167

Original Paper

On a Novel Source Technology for Deep Aluminum Diffusion for Silicon Power Electronics

Gudrun Rattmann,

Gudrun Rattmann

Fraunhofer Institute for Integrated Systems and Device Technology IISB, Schottkystrasse 10, 91058 Erlangen, Germany

Search for more papers by this author

Peter Pichler,

Corresponding Author

Peter Pichler

[email protected]

orcid.org/0000-0002-8155-8895

Fraunhofer Institute for Integrated Systems and Device Technology IISB, Schottkystrasse 10, 91058 Erlangen, Germany

Chair of Electron Devices, University of Erlangen-Nuremberg, Cauerstrasse 6, 91058 Erlangen, Germany

Search for more papers by this author

Tobias Erlbacher,

Tobias Erlbacher

Fraunhofer Institute for Integrated Systems and Device Technology IISB, Schottkystrasse 10, 91058 Erlangen, Germany

Chair of Electron Devices, University of Erlangen-Nuremberg, Cauerstrasse 6, 91058 Erlangen, Germany

Search for more papers by this author

Gudrun Rattmann,

Gudrun Rattmann

Fraunhofer Institute for Integrated Systems and Device Technology IISB, Schottkystrasse 10, 91058 Erlangen, Germany

Search for more papers by this author

Peter Pichler,

Corresponding Author

Peter Pichler

[email protected]

orcid.org/0000-0002-8155-8895

Fraunhofer Institute for Integrated Systems and Device Technology IISB, Schottkystrasse 10, 91058 Erlangen, Germany

Chair of Electron Devices, University of Erlangen-Nuremberg, Cauerstrasse 6, 91058 Erlangen, Germany

Search for more papers by this author

Tobias Erlbacher,

Tobias Erlbacher

Fraunhofer Institute for Integrated Systems and Device Technology IISB, Schottkystrasse 10, 91058 Erlangen, Germany

Chair of Electron Devices, University of Erlangen-Nuremberg, Cauerstrasse 6, 91058 Erlangen, Germany

Search for more papers by this author

First published: 04 June 2019

https://doi.org/10.1002/pssa.201900167

Share a link

Email
Wechat
Bluesky

Abstract

For the realization of high breakdown voltages in power electronics, a low-cost technology is developed, which allows the deep diffusion of aluminum from a physically deposited source. The approach requires only standard process steps that are already established in the manufacturing of silicon power devices. The sheet concentration of the diffusion profiles exceeds, with 8 $\times$ 10¹³ cm⁻², the ones of comparable implanted and annealed profiles by up to a factor of two. A full numerical analysis of the resulting profiles is provided.

Conflict of Interest

The authors declare no conflict of interest.

References

1J. Lutz, H. Schlangenotto, U. Scheuermann, R. De Doncker, Semiconductor Power Devices, 2^nd Edition, Springer International Publishing, New York 2018.
10.1007/978-3-319-70917-8
Google Scholar
2W. Rosnowski, J. Electrochem. Soc. 1978, 125, 957.
10.1149/1.2131598
CAS Web of Science® Google Scholar
3H. J. Schulze, in ESSDERC'86, Europhysics Conference Abstracts Vol. 10G (Ed: D. F. Moore), The Europhysical Society, Petit Lancy 1986, pp. 206–207.
Google Scholar
4E. Halder, P. Roggwiller, J. Gobrecht, Phys. Scripta 1989, 39, 406
10.1088/0031-8949/39/3/030
CAS Web of Science® Google Scholar
5P. Brüesch, E. Halder, P. Kluge, J. Rhyner, P. Roggwiller, T. Stockmeier, F. Stucki, H. J. Wiesmann, J. Appl. Phys. 1990, 68, 2226
10.1063/1.346526
Web of Science® Google Scholar
6G. Galvagno, A. Scandurra, V. Raineri, E. Rimini, A. La Ferla, V. Sciascia, F. Frisina, M. Raspagliesi, G. Ferla, Nucl. Instrum. Meth. 1993, 74, 105.
10.1016/0168-583X(93)95023-X
Web of Science® Google Scholar
7B. Goldstein, Bull. Am. Phys. Soc., Series II 1956, 1, 145.
CAS Google Scholar
8Y. Mochizuki, H. Hachino, Y. Misawa, US Patent US4154632A, 1979.
Google Scholar
9W. Rosnowski, J. M. S. Neilson, US Patent US4199386 A, 1980.
Google Scholar
10J. L. Murray, A. J. McAlister, Bull. Alloy Phase Diagrams 1984, 5, 74.
10.1007/BF02868729
CAS Google Scholar
11S. Vaidya, J. Electron. Mater. 1981, 10, 337
10.1007/BF02654798
CAS Web of Science® Google Scholar
12T. Yoshikawa, K. Morita, J. Electrochem. Soc. 2003, 150, G465.
10.1149/1.1588300
CAS Web of Science® Google Scholar
13C. S. Fuller, J. A. Ditzenberger, J. Appl. Phys. 1956, 27, 544.
10.1063/1.1722419
CAS Web of Science® Google Scholar
14C. Crank, The Mathematics of Diffusion, Clarendon Press, Oxford 1975.
PubMed Google Scholar
15P. Pichler, W. Jüngling, S. Selberherr, E. Guerrero, H. W. Pötzl, IEEE Trans. Computer-Aided Des. 1985, 4, 384.
10.1109/TCAD.1985.1270136
Web of Science® Google Scholar
16P. Pichler, Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon, Springer, Wien, New York 2004.
10.1007/978-3-7091-0597-9
Google Scholar
17G. Galvagno, F. La Via, F. Priolo, E. Rimini, Semicond. Sci. Technol. 1993, 8, 488.
10.1088/0268-1242/8/4/002
CAS Web of Science® Google Scholar

Volume216, Issue17

Special Issue:Gettering and Defect Engineering in Semiconductor Technology

September 2019

1900167

On a Novel Source Technology for Deep Aluminum Diffusion for Silicon Power Electronics

Abstract

Conflict of Interest

References

References

Information

About Wiley Online Library

Help & Support

Opportunities

Connect with Wiley

On a Novel Source Technology for Deep Aluminum Diffusion for Silicon Power Electronics

Abstract

Conflict of Interest

References

References

Related

Information