In Situ Observation of the Degradation in Multi-Crystalline Si Solar Cells by Electroluminescence
Corresponding Author
Teimuraz Mchedlidze
Technische Universität Dresden, Haeckelstr. 3, 01062 Dresden, Germany
Search for more papers by this authorMd Mahabubul Alam
Technische Universität Dresden, Haeckelstr. 3, 01062 Dresden, Germany
Search for more papers by this authorAxel Herguth
Department of Physics, University of Konstanz, 78464 Konstanz, Germany
Search for more papers by this authorJoerg Weber
Technische Universität Dresden, Haeckelstr. 3, 01062 Dresden, Germany
Search for more papers by this authorCorresponding Author
Teimuraz Mchedlidze
Technische Universität Dresden, Haeckelstr. 3, 01062 Dresden, Germany
Search for more papers by this authorMd Mahabubul Alam
Technische Universität Dresden, Haeckelstr. 3, 01062 Dresden, Germany
Search for more papers by this authorAxel Herguth
Department of Physics, University of Konstanz, 78464 Konstanz, Germany
Search for more papers by this authorJoerg Weber
Technische Universität Dresden, Haeckelstr. 3, 01062 Dresden, Germany
Search for more papers by this authorAbstract
Carrier-induced efficiency degradation of multi-crystalline Si (mc-Si) solar cells is studied in situ by detecting the electroluminescence (EL) from the cells. Series of spatially resolved EL images of the cells during constant forward current operation at low (24 °C) and at elevated (70 °C) temperatures are recorded. The degradation induced changes in the open circuit voltage correlate well with changes in the EL intensities. The similarity of light-induced and carrier-induced degradation processes for mc-Si cells is confirmed. The correlation of the degradation with the material structure is analyzed. The degradation appears to correlate with the density of structural defects in the cells. The results verify that EL images present a powerful tool for in situ analyses of mc-Si cell degradation processes in various cell structures with a broad variety of biasing and temperature conditions.
Conflict of Interest
The authors declare no conflict of interest.
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