Low-temperature grown indium oxide nanowire-based antireflection coatings for multi-crystalline silicon solar cells
Yu-Cian Wang
Institute of Materials Science and Engineering, National Central University, Taoyuan 32001, Taiwan
Search for more papers by this authorChih-Yao Chen
Institute of Materials Science and Engineering, National Central University, Taoyuan 32001, Taiwan
Search for more papers by this authorCorresponding Author
I-Chen Chen
Institute of Materials Science and Engineering, National Central University, Taoyuan 32001, Taiwan
Corresponding author: e-mail: [email protected], Phone: +886 3 422 7151 ext 34907, Fax: +886 3 280 5034
Search for more papers by this authorYu-Cian Wang
Institute of Materials Science and Engineering, National Central University, Taoyuan 32001, Taiwan
Search for more papers by this authorChih-Yao Chen
Institute of Materials Science and Engineering, National Central University, Taoyuan 32001, Taiwan
Search for more papers by this authorCorresponding Author
I-Chen Chen
Institute of Materials Science and Engineering, National Central University, Taoyuan 32001, Taiwan
Corresponding author: e-mail: [email protected], Phone: +886 3 422 7151 ext 34907, Fax: +886 3 280 5034
Search for more papers by this authorAbstract
Light harvesting by indium oxide nanowires (InO NWs) as an antireflection layer on multi-crystalline silicon (mc-Si) solar cells has been investigated. The low-temperature growth of InO NWs was performed in electron cyclotron resonance (ECR) plasma with an O2–Ar system using indium nanocrystals as seed particles via the self-catalyzed growth mechanism. The size-dependence of antireflection properties of InO NWs was studied. A considerable enhancement in short-circuit current (from 35.39 to 38.33 mA cm−2) without deterioration of other performance parameters is observed for mc-Si solar cells coated with InO NWs.
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