Volume 213, Issue 8 pp. 2169-2175
Original Paper

Monitoring the phase evolution of Cu(In,Ga)Se2 by different Se flux via in-situ XRD

Setareh Zahedi-Azad

Corresponding Author

Setareh Zahedi-Azad

Martin-Luther-University Halle-Wittenberg, Fachgruppe Photovoltaik, 06120 Halle, Germany

Corresponding author: e-mail [email protected], Phone: +49-345-5525494, Fax: +49-345-5527354Search for more papers by this author
Enrico Jarzembowski

Enrico Jarzembowski

Martin-Luther-University Halle-Wittenberg, Fachgruppe Photovoltaik, 06120 Halle, Germany

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Stefan Hartnauer

Stefan Hartnauer

Martin-Luther-University Halle-Wittenberg, Fachgruppe Photovoltaik, 06120 Halle, Germany

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Leonard Wägele

Leonard Wägele

Martin-Luther-University Halle-Wittenberg, Fachgruppe Photovoltaik, 06120 Halle, Germany

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Dieter Greiner

Dieter Greiner

Helmholtz Zentrum Berlin für Materialen und Energie, 14109 Berlin, Germany

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Roland Scheer

Roland Scheer

Martin-Luther-University Halle-Wittenberg, Fachgruppe Photovoltaik, 06120 Halle, Germany

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First published: 26 February 2016
Citations: 5

Abstract

Through in-situ X-ray diffraction, we examined the phase evolution of Cu(In,Ga)Se2 films deposited by three stage co-evaporation with regard to Se flux and substrate temperature. The deposition method is based on the sequence of Cu-poor/Cu-rich/Cu-poor, which is beneficial for improving the crystal quality as well as the conversi-on efficiency. We find that while the Se flux during the first stage determines the final orientation, the substrate temperature moderates the degree of the preferred orientation. The orientation of the intermediate Cu2Se phase follows the preferred orientation of the CIGSe film, indicating an epitaxial relationship between the two phases.

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