Three-dimensional ordering in self-organized (In,Ga)As quantum dot multilayer structures
Corresponding Author
V. Kladko
V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, pr. Nauki 45, 03680 Kyiv, Ukraine
Phone/Fax: +38 044 525 57 58Search for more papers by this authorM. Slobodian
V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, pr. Nauki 45, 03680 Kyiv, Ukraine
Search for more papers by this authorP. Lytvyn
V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, pr. Nauki 45, 03680 Kyiv, Ukraine
Search for more papers by this authorV. Strelchuk
V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, pr. Nauki 45, 03680 Kyiv, Ukraine
Search for more papers by this authorYu. Mazur
Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701, USA
Search for more papers by this authorE. Marega
Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701, USA
Search for more papers by this authorM. Hussein
Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701, USA
Search for more papers by this authorG. Salamo
Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701, USA
Search for more papers by this authorCorresponding Author
V. Kladko
V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, pr. Nauki 45, 03680 Kyiv, Ukraine
Phone/Fax: +38 044 525 57 58Search for more papers by this authorM. Slobodian
V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, pr. Nauki 45, 03680 Kyiv, Ukraine
Search for more papers by this authorP. Lytvyn
V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, pr. Nauki 45, 03680 Kyiv, Ukraine
Search for more papers by this authorV. Strelchuk
V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, pr. Nauki 45, 03680 Kyiv, Ukraine
Search for more papers by this authorYu. Mazur
Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701, USA
Search for more papers by this authorE. Marega
Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701, USA
Search for more papers by this authorM. Hussein
Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701, USA
Search for more papers by this authorG. Salamo
Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701, USA
Search for more papers by this authorAbstract
Molecular beam epitaxy (MBE) grown In0.5Ga0.5As/GaAs multilayer structures with quantum dots chains (QDs), obtained under different growth conditions, were investigated by high-resolution X-ray diffractometry (HRXRD) and AFM. It was determined that self-organized epitaxial growth of In0.5Ga0.5As/GaAs can lead to the formation of three-dimensional quantum-dot crystals with triclinic (distorted cubic) unit cell. The mechanisms of QDs ordering in dependence on As flux are analyzed.
References
- 1 J. Phillips, J. Appl. Phys. 91, 4590 (2002).
- 2 H. Lee, J. A. Johnson, J. S. Speck, and P. M. Petroff, J. Vac. Sci. Technol. B 18, 2193 (2000).
- 3 Y. Nakamura, O. G. Schmidt, N. Y. Jin-Phillipp, S. Kiravittaya, C. Muller, K. Eberl, H. Grabeldinger, and H. Schwizer, J. Cryst. Growth 242, 339 (2002).
- 4 C. K. Hyon, S. C. Choi, S. H. Song, S. W. Hwang, M. H. Son, D. Ahn, Y. J. Park, and E. K. Kim, Appl. Phys. Lett. 77, 2607 (2000).
- 5 S. Birudavolu, N. Nuntawong, G. Balakrishnan, Y. C. Xin, S. Huang, S. C. Lee, S. R. J. Brueck, C. P. Hains, and D. L. Huffaker, Appl. Phys. Lett. 85, 2337 (2004).
- 6
V. A. Shchukin,
N. N. Ledentsov, and
D. Bimberg,
Epitaxy of Nanostructures (
Springer,
Berlin,
2004).
10.1007/978-3-662-07066-6 Google Scholar
- 7 D. Leonard, M. Krishnamorthy, C. M. Reaves, S. P. Denbaars, and P. M. Petroff, Appl. Phys. Lett. 63, 3203 (1993).
- 8 P. M. Lytvyn, V. V. Strelchuk, O. F. Kolomys, I. V. Prokopenko, M. Ya. Valakh, Yu. I. Masur, Zu. M. Wang, G. J. Salamo, and M. Hanke, Appl. Phys. Lett. 91, 173118 (2007).
- 9 T. Sugaya, T. Amano, and K. Komory, J. Appl. Phys. 100, 063107-1 (2006).
- 10 T. Sugaya, S. Furue, T. Amano, and K. Komory, J. Cryst. Growth 301-303, 801 (2007).
- 11 G. Springholz, V. Holy, M. Pinczolits, and G. Bauer, Science. 282, 734 (1998).
- 12 O. M. Yefanov and V. P. Kladko, Met. Phys. New Tech. 28, 227 (2006) (in Russian).
- 13 D. K. Bowen and B. K. Tanner, High-Resolution X-ray Diffractometry and Topography ( Taylor & Francis, London, 1998).
- 14
U. Pietsch,
V. Holy, and
T. Baumbach,
High-Resolution X-ray Scattering from Thin Films to Lateral Nanostructures (
Springer,
New York,
2004).
10.1007/978-1-4757-4050-9 Google Scholar
- 15 V. P. Kladko, M. V. Slobodian, V. V. Strelchuk, O. M. Yefanov, V. F. Machulin, Yu. I. Mazur, Zh. M. Wang, and G. J. Salamo, Phys. Status Solidi A 204, 2567 (2007).
- 16 C. Giannini, L. Tapfer, Y. Zhuang, L. DeCaro, T. Marschne-rand, and W. Stolz, Phys. Rev. B 55, 5276 (1997).
- 17 M. H. Son, D. Ahn, Y. J. Park, and E. K. Kim, Appl. Phys. Lett. 77, 2607 (2000).
- 18 A. Ishii, K. Seino, and T. Aisaka, J. Cryst. Growth 236, 511 (2002).
- 19 V. M. Kaganer, R. Kohler, M. Schmidbauer, and R. Opitz, Phys. Rev. B 55, 1793– 1810 (1997).
- 20 D. C. Houghton, D. D. Perovic, J.-M. Baribeau, and G. G. Weatherty, J. Appl. Phys. 67, 1850 (1990).