Building Block-Inspired Hybrid Perovskite Derivatives for Ferroelectric Channel Layers with Gate-Tunable Memory Behavior
Haojie Xu
State Key Laboratory of Structure Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002 P. R. China
University of Chinese Academy of Sciences, Beijing, 100049 P. R. China
Search for more papers by this authorFapeng Sun
State Key Laboratory of Structure Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002 P. R. China
University of Chinese Academy of Sciences, Beijing, 100049 P. R. China
Search for more papers by this authorWuqian Guo
State Key Laboratory of Structure Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002 P. R. China
Search for more papers by this authorShiguo Han
State Key Laboratory of Structure Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002 P. R. China
Search for more papers by this authorYi Liu
State Key Laboratory of Structure Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002 P. R. China
Search for more papers by this authorQingshun Fan
State Key Laboratory of Structure Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002 P. R. China
Search for more papers by this authorLiwei Tang
State Key Laboratory of Structure Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002 P. R. China
University of Chinese Academy of Sciences, Beijing, 100049 P. R. China
Search for more papers by this authorProf. Wei Liu
State Key Laboratory of Structure Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002 P. R. China
University of Chinese Academy of Sciences, Beijing, 100049 P. R. China
Search for more papers by this authorProf. Junhua Luo
State Key Laboratory of Structure Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002 P. R. China
University of Chinese Academy of Sciences, Beijing, 100049 P. R. China
Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian, 350108 P. R. China
Search for more papers by this authorCorresponding Author
Prof. Zhihua Sun
State Key Laboratory of Structure Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002 P. R. China
University of Chinese Academy of Sciences, Beijing, 100049 P. R. China
Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian, 350108 P. R. China
Search for more papers by this authorHaojie Xu
State Key Laboratory of Structure Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002 P. R. China
University of Chinese Academy of Sciences, Beijing, 100049 P. R. China
Search for more papers by this authorFapeng Sun
State Key Laboratory of Structure Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002 P. R. China
University of Chinese Academy of Sciences, Beijing, 100049 P. R. China
Search for more papers by this authorWuqian Guo
State Key Laboratory of Structure Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002 P. R. China
Search for more papers by this authorShiguo Han
State Key Laboratory of Structure Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002 P. R. China
Search for more papers by this authorYi Liu
State Key Laboratory of Structure Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002 P. R. China
Search for more papers by this authorQingshun Fan
State Key Laboratory of Structure Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002 P. R. China
Search for more papers by this authorLiwei Tang
State Key Laboratory of Structure Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002 P. R. China
University of Chinese Academy of Sciences, Beijing, 100049 P. R. China
Search for more papers by this authorProf. Wei Liu
State Key Laboratory of Structure Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002 P. R. China
University of Chinese Academy of Sciences, Beijing, 100049 P. R. China
Search for more papers by this authorProf. Junhua Luo
State Key Laboratory of Structure Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002 P. R. China
University of Chinese Academy of Sciences, Beijing, 100049 P. R. China
Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian, 350108 P. R. China
Search for more papers by this authorCorresponding Author
Prof. Zhihua Sun
State Key Laboratory of Structure Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002 P. R. China
University of Chinese Academy of Sciences, Beijing, 100049 P. R. China
Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian, 350108 P. R. China
Search for more papers by this authorGraphical Abstract
A building block assembling method allows a series of ferroelectric semiconductors of 2D hybrid perovskites to be constructed. The resulting species have unprecedent gate-tunable memory behaviors potentially boosting future non-volatile memory applications.
Abstract
Ferroelectric photovoltaics driven by spontaneous polarization (Ps) holds a promise for creating the next-generation optoelectronics, spintronics and non-volatile memories. However, photoactive ferroelectrics are quite scarce in single homogeneous phase, owing to the severe Ps fatigue caused by leakage current of photoexcited carriers. Here, through combining inorganic and organic components as building blocks, we constructed a series of ferroelectric semiconductors of 2D hybrid perovskites, (HA)2(MA)n-1PbnBr3n+1 (n=1–5; HA=hexylamine and MA=methylamine). It is intriguing that their Curie temperatures are greatly enhanced by reducing the thickness of inorganic frameworks from MAPbBr3 (n=∞, Tc=239 K) to n=2 (Tc=310 K, ΔT=71 K). Especially, on account of the coupling of room-temperature ferroelectricity (Ps≈1.5 μC/cm2) and photoconductivity, n=3 crystal wafer was integrated as channel field effect transistor that shows excellent a large short-circuit photocurrent ≈19.74 μA/cm2. Such giant photocurrents can be modulated through manipulating gate voltage in a wide range (±60 V), exhibiting gate-tunable memory behaviors of three current states (“-1/0/1” states). We believe that this work sheds light on further exploration of ferroelectric materials toward new non-volatile memory devices.
Open Research
Data Availability Statement
Research data are not shared.
Supporting Information
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| anie202309416-sup-0001-1L-FEP.cif313.4 KB | Supporting Information |
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| anie202309416-sup-0001-2L-FEP.cif188.2 KB | Supporting Information |
| anie202309416-sup-0001-2L-PEP.cif207.2 KB | Supporting Information |
| anie202309416-sup-0001-3L-FEP.cif190.6 KB | Supporting Information |
| anie202309416-sup-0001-3L-PEP.cif256.7 KB | Supporting Information |
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| anie202309416-sup-0001-4L-PEP.cif239.1 KB | Supporting Information |
| anie202309416-sup-0001-5L-FEP.cif318.9 KB | Supporting Information |
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