Volume 130, Issue 19 p. 5656
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Rücktitelbild: Promoted Fixation of Molecular Nitrogen with Surface Oxygen Vacancies on Plasmon-Enhanced TiO2 Photoelectrodes (Angew. Chem. 19/2018)

Chengcheng Li

Chengcheng Li

School of Chemical Engineering and Technology, Tianjin University, Collaborative Innovation Center of Chemical Science and Engineering, Tianjin, 300072 China

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Dr. Tuo Wang

Dr. Tuo Wang

School of Chemical Engineering and Technology, Tianjin University, Collaborative Innovation Center of Chemical Science and Engineering, Tianjin, 300072 China

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Dr. Zhi-Jian Zhao

Dr. Zhi-Jian Zhao

School of Chemical Engineering and Technology, Tianjin University, Collaborative Innovation Center of Chemical Science and Engineering, Tianjin, 300072 China

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Weimin Yang

Weimin Yang

Department of Physics, Xiamen University, Xiamen, 361005 China

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Prof. Jian-Feng Li

Prof. Jian-Feng Li

College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, 361005 China

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Ang Li

Ang Li

School of Chemical Engineering and Technology, Tianjin University, Collaborative Innovation Center of Chemical Science and Engineering, Tianjin, 300072 China

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Prof. Zhilin Yang

Prof. Zhilin Yang

Department of Physics, Xiamen University, Xiamen, 361005 China

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Prof. Geoffrey A. Ozin

Prof. Geoffrey A. Ozin

Department of Chemistry, University of Toronto, Toronto, Ontario, M5S 3H6 Canada

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Prof. Jinlong Gong

Corresponding Author

Prof. Jinlong Gong

School of Chemical Engineering and Technology, Tianjin University, Collaborative Innovation Center of Chemical Science and Engineering, Tianjin, 300072 China

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First published: 30 March 2018

Graphical Abstract

Die Ammoniak-Synthese …… durch photoelektrochemische N2-Reduktion benötigt nur wenig Energie und gelingt bei Umgebungsbedingungen oder leicht erhöhten Temperaturen und Drücken. O-Fehlstellen an der Oberfläche haben großes Potenzial für die N2-Adsorption und -Aktivierung, ihre Einführung ohne Veränderung der Materialeigenschaften ist aber nach wie vor eine Herausforderung. In ihrer Zuschrift auf S. 5380 zeigen J. Gong und Mitarbeiter, wie O-Fehlstellen in äußeren Schichten von dünnen Filmen aus amorphem TiO2 die Reduktion von N2 zu NH3 vereinfachen.

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