Characterisation of the Interface States between Amorphous Diamond-Like Carbon Films and (100) Silicon

Amorphous diamond-like carbon films were grown onto (100) Si substrates using rf plasma CVD of methane. Then the interface states were examined using the conductance technique. Metal–insulator–semiconductor (MIS) devices were made and proper modeling was used. The statistical model was used to fit the experimental data and calculate the density of interface states. The technique revealed a density of interface states between 10¹¹ and 10¹² eV^—1 cm^—2. Subsequent thermal annealing reduced this density.