Volume 33, Issue 3 pp. 401-408
Original Paper

AES Investigation of Chemical Treatment Effect on CdTe and CdZnTe Surfaces

A. Iller Dr.

A. Iller Dr.

Institute of Vacuum Technology, Długa 44/50, PL-00-241 Warszawa, Poland

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G. Karczewski Dr hab.

G. Karczewski Dr hab.

Institute of Vacuum Technology, Długa 44/50, PL-00-241 Warszawa, Poland

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G. Karczewski Dr hab.

G. Karczewski Dr hab.

Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, PL-02-668 Warszawa, Poland

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G. Kolmhofer

G. Kolmhofer

Institute of Semiconductor Physics, Johannes Kepler University, A-4040 Linz, Austria

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E. Łusakowska Mgr

E. Łusakowska Mgr

Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, PL-02-668 Warszawa, Poland

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H. Sitter Univ. Doz. Dr.

H. Sitter Univ. Doz. Dr.

Institute of Semiconductor Physics, Johannes Kepler University, A-4040 Linz, Austria

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Abstract

{211} polar surfaces of a Cd0.96Zn0.04Te chemically treated single crystal were investigated by Auger electron spectroscopy depth profiling. It was found that the use of a discriminatory “black-white” etchant causes the formation of a thick layer with cadmium having been severely depleted at both (211) A and (211) B faces. The thickness of this layer is larger by a factor of 2 for the matt black face then for the bright and reflecting face. AES investigation of chemical treatment influence on (100) CdTe epitaxial layer surface has been performed. It has been established that etching in Br/methanol solution removes S, Cl and O containing contaminants from the surface, but simultaneously forms a Cd-depleted layer.

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