Signature of dislocations and stacking faults of face-centred cubic nanocrystals in coherent X-ray diffraction patterns: a numerical study

Dupraz, M.; Beutier, G.; Rodney, D.; Mordehai, D.; Verdier, M.

doi:10.1107/S1600576715005324

Journal of Applied Crystallography Journal of Applied

Crystallography

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Figure 10

(a) Effect of the position of a perfect screw dislocation in a 30 × 30 × 30 nm copper crystal in a Wulff geometry for g||b (g = 2 $[\overline2]$ 0). In the vicinity of the crystal centre the intensity distribution is altered, and as the dislocation moves towards an edge of the crystal its characteristic signature completely vanishes. (b) Effect of the position of a stacking fault in a 30 × 30 × 30 nm copper crystal in a Wulff geometry for g = 11 $[\overline 1]$ . The stacking fault position strongly affects the fringe intensity and period, and the intensity and splitting of the Bragg reflection. (c) Intensity along [111] for different positions of the stacking fault in the crystallite. The selected area of the reciprocal space is kept to the same value in all figures and is equal to 0.045 × 0.0675 Å⁻¹.

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APPLIED

CRYSTALLOGRAPHY

ISSN: 1600-5767

Volume 48| Part 3| June 2015| Pages 621-644

https://doi.org/10.1107/S1600576715005324

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