Physical Inorganic Chemistry
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ChemInform Abstract: Ruthenium Oxide Film Electrodes Prepared at Low Temperatures for Electrochemical Capacitors.
First published: 23 May 2010
Abstract
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ChemInform Abstract
Ru oxide films are grown on Ta substrates at temperatures from 100 to 300 °C using a Ru(OEt)3 solution in EtOH. The films are characterized by XRD and SEM. Amorphous Ru oxide films are formed at temperatures of 100—200 °C. The highest specific capacitance of 593 F/g and interfacial capacitance of 4.0 F/cm2 are found for the film electrode grown at 200 °C.
