Volume 31, Issue 7
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ChemInform Abstract: Quantum-Confined Gallium Nitride in MCM-41.

Holger Winkler

Holger Winkler

Lehrstuhl Anorg. Chem., Ruhr-Univ., D-44801 Bochum, Germany

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Alexander Birkner

Alexander Birkner

Lehrstuhl Anorg. Chem., Ruhr-Univ., D-44801 Bochum, Germany

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Volker Hagen

Volker Hagen

Lehrstuhl Anorg. Chem., Ruhr-Univ., D-44801 Bochum, Germany

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Ingo Wolf

Ingo Wolf

Lehrstuhl Anorg. Chem., Ruhr-Univ., D-44801 Bochum, Germany

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Roland Schmechel

Roland Schmechel

Lehrstuhl Anorg. Chem., Ruhr-Univ., D-44801 Bochum, Germany

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Heinz von Seggern

Heinz von Seggern

Lehrstuhl Anorg. Chem., Ruhr-Univ., D-44801 Bochum, Germany

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Roland A. Fischer

Roland A. Fischer

Lehrstuhl Anorg. Chem., Ruhr-Univ., D-44801 Bochum, Germany

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First published: 10 June 2010

Abstract

ChemInform is a weekly Abstracting Service, delivering concise information at a glance that was extracted from about 100 leading journals. To access a ChemInform Abstract of an article which was published elsewhere, please select a “Full Text” option. The original article is trackable via the “References” option.

ChemInform Abstract

GaN is inserted into a microporous matrix, MCM-41, via a simple loading technique using the soluble precursor (N3)3GaNMe3. The practical advantage of the adduct-stabilized triazidogallium compound is that the loading process and the conversion into GaN is possible in a non-aqueous medium and can be followed by IR. The thermolysis of the loaded MCM-41 in flowing NH3 (300 °C, 1 h) gives very pure (e.g. hydrocarbon- and oxygen-free) GaN.

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