ChemInform Abstract: Dopant Distribution and Grain Growth Control in BaTiO3 Ceramics Doped with ZnO—SiO2—P2O5.
Abstract
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ChemInform Abstract
Simultaneous incorporation of small amounts of SiO2, P2O5, and ZnO into BaTiO3 ceramics increases the sintering temperature by ≈200 °C, but sintering occurs much faster and hence both maximum density and shrinkage rate are reached at lower temperature as compared to the undoped material. For the doped material porosity coalescence and removal is promoted in the first sintering step and high density is reached for the sintering range 1175—1225 °C with little grain growth. For samples sintered below 1250 °C dopants are incorporated into BaTiO3 as solid solution. Low boundary conductivity and a low level of dielectric losses as well as the flat dependence of the permittivity on the temperature make these ceramics promising for X7R capacitor applications.
